NDLI: Infrared materials for thermophotovoltaic applications

Content Provider	Springer Nature Link
Author	Charache, G. W. Egley, J. L. Depoy, D. M. Danielson, L. R. Freeman, M. J. Dziendziel, R. J. Moynihan, J. F. Baldasaro, P. F. Campbell, B. C. Wang, C. A. Choi, H. K. Turner, G. W. Wojtczuk, S. J. Colter, P. Sharps, P. Timmons, M. Fahey, R. E. Zhang, K.
Copyright Year	1998
Abstract	Thermophotovoltaic generation of electricity is attracting renewed attention due to recent advances in low bandgap (0.5–0.7 eV) III-V semiconductors. The use of these devices in a number of applications has been reviewed in a number of publications.$^{1–4}$ Two potential low-bandgap diode materials are In$_{x}$Ga$_{1−x}$As$_{y}$Sb$_{1−y}$ and In$_{x}$Ga$_{1−x}$As. The performance of these devices are comparable (quantum efficiency, open circuit voltage, fill factor) despite the latter’s long-term development for optoelectronics. For an 1100°C blackbody, nominally 0.55 eV devices at 25°C exhibit average photon-weighted internal quantum efficiencies of 70–80%, open circuit voltage factors of 60–65%, and fill factors of 65–70%. Equally important as the energy conversion device is the spectral control filter that effectively transmits above bandgap radiation into the diode and reflects the below bandgap radiation back to the radiator. Recent developments in spectral control technology, including InGaAs plasma filters and nonabsorbing interference filters are presented. Current tandem filters exhibit spectral utilization factors of ∼65% for an 1100°C blackbody.
Starting Page	1038
Ending Page	1042
Page Count	5
File Format	PDF
ISSN	03615235
Journal	Journal of Electronic Materials
Volume Number	27
Issue Number	9
e-ISSN	1543186X
Language	English
Publisher	Springer-Verlag
Publisher Date	1998-01-01
Publisher Place	New York
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	InGaAs InGaAsSb thermophotovoltaic (TPV) generation Optical and Electronic Materials Characterization and Evaluation of Materials Electronics and Microelectronics, Instrumentation Solid State Physics and Spectroscopy
Content Type	Text
Resource Type	Article
Subject	Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Fabrication and characterization of GaSb based thermophotovoltaic cells using Zn diffusion from a doped spin-on glass source

Performance limitation of short wavelength infrared InGaAs and HgCdTe photodiodes

Structural and infrared absorption properties of self-organized InGaAs/GaAs quantum dots multilayers

Dry-etch fabrication of reduced area InGaAs/InP DHBT devices for high speed circuit applications

Growth and characterization of n-type InP/InGaAs quantum well infrared photodetectors for response at 8.93 µm

Growth and characterization of InGaAs/InP p-quantum-well infrared photodetectors with extremely thin quantum wells

Fundamental physics of infrared detector materials

Structural stability of low temperature grown InGaAs/GaAs heterostructure

A simple single-step diffusion and emitter etching process for high-efficiency gallium-antimonide thermophotovoltaic devices

Infrared materials for thermophotovoltaic applications

Similar Documents

Fabrication and characterization of GaSb based thermophotovoltaic cells using Zn diffusion from a doped spin-on glass source

Performance limitation of short wavelength infrared InGaAs and HgCdTe photodiodes

Structural and infrared absorption properties of self-organized InGaAs/GaAs quantum dots multilayers

Dry-etch fabrication of reduced area InGaAs/InP DHBT devices for high speed circuit applications

Growth and characterization of n-type InP/InGaAs quantum well infrared photodetectors for response at 8.93 µm

Growth and characterization of InGaAs/InP p-quantum-well infrared photodetectors with extremely thin quantum wells

Fundamental physics of infrared detector materials

Structural stability of low temperature grown InGaAs/GaAs heterostructure

A simple single-step diffusion and emitter etching process for high-efficiency gallium-antimonide thermophotovoltaic devices

Infrared materials for thermophotovoltaic applications