NDLI: Growth and electronic properties of ZnO epilayers by plasma-assisted molecular beam epitaxy

Content Provider	Springer Nature Link
Author	Murphy, T. E. Chen, D. Y. Phillips, J. D.
Copyright Year	2005
Abstract	ZnO thin films were grown on c-plane sapphire substrates by plasma-assisted molecular beam epitaxy (MBE). The crystalline properties of the layers as measured by x-ray diffraction were found to improve with lower growth temperatures, where the full-width at half-maximum (FWHM) of the x-ray rocking curves was shown to be in the range of 100 to 1,100 arcsec. The electronic properties were found to improve for higher growth temperatures, with n-type carrier concentration and electron mobility in the range of 1×10$^{17}$ −5×10$^{18}$ cm$^{−3}$ and 80–36 cm$^{2}$/Vs, respectively. Photoluminescence (PL) measurements indicated that growth at higher temperatures provided superior band edge radiative emission, while growth at lower temperatures resulted in significant deep level radiative emission centered at 2.35 eV. Photoconductive decay measurements exhibit a slow decay indicating the presence of hole traps, where Zn vacancies are believed to be the source of both the slow decay and the deep level emission observed in PL spectra.
Starting Page	699
Ending Page	703
Page Count	5
File Format	PDF
ISSN	03615235
Journal	Journal of Electronic Materials
Volume Number	34
Issue Number	6
e-ISSN	1543186X
Language	English
Publisher	Springer-Verlag
Publisher Date	2005-01-01
Publisher Place	New York
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	ZnO molecular beam epitaxy (MBE) electrical properties Optical and Electronic Materials Characterization and Evaluation of Materials Electronics and Microelectronics, Instrumentation Solid State Physics and Spectroscopy
Content Type	Text
Resource Type	Article
Subject	Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering

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