NDLI: Tunneling Atomic Force Microscopy Studies on Surface Growth Pits Due to Dislocations in 4H-SiC Epitaxial Layers

Content Provider	Springer Nature Link
Author	Ohtani, boru Ushio, Shoji Kaneko, Tadaaki Aigo, Takashi Katsu, Masakazu Fujimoto, Tatsuo Ohashi, Wataru
Copyright Year	2012
Abstract	The morphological and electrical properties of surface growth pits caused by dislocations in 4H-SiC epitaxial layers were characterized using tunneling atomic force microscopy. The characteristic distribution of the tip current between the metal-coated atomic force microscopy tip and the SiC was observed within a large surface growth pit caused by a threading screw dislocation. The current was highly localized inside the pit and occurred only on the inclined surface in the up-step direction near the pit bottom. This paper discusses the causes and possible mechanisms of the observed tip current distribution inside surface growth pits.
Starting Page	2193
Ending Page	2196
Page Count	4
File Format	PDF
ISSN	03615235
Journal	Journal of Electronic Materials
Volume Number	41
Issue Number	8
e-ISSN	1543186X
Language	English
Publisher	Springer US
Publisher Date	2012-05-31
Publisher Place	Boston
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Silicon carbide epitaxial layer dislocation surface growth pit tunneling atomic force microscopy (TUNA) Electronics and Microelectronics, Instrumentation Optical and Electronic Materials Characterization and Evaluation of Materials Solid State Physics
Content Type	Text
Resource Type	Article
Subject	Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering

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