NDLI: Barrier layers for Cu ULSI metallization

Content Provider	Springer Nature Link
Author	Shacham Diamand, Yosi
Copyright Year	2001
Abstract	Barrier layers are integral parts of many metal interconnect systems. In this paper we review the current status of barrier layers for copper metallization for ultra-large-scale-integration (ULSI) technology for integrated circuits (ICs) manufacturing. The role of barrier layers is reviewed and the criteria that determine the process window, i.e. the optimum barrier thickness and the deposition processes, for their manufacturing are discussed. Various deposition methods are presented: physical vapor deposition (PVD), chemical vapor deposition (CVD), electrochemical deposition (ECD), electroless deposition (ELD), and atomic layer CVD (ALCVD) for barrier layers implementation. The barrier integration methods and the interaction between the barrier and the copper metallization are presented and discussed. Finally, the common inspection and metrology for barrier layer are critically reviewed.
Starting Page	336
Ending Page	344
Page Count	9
File Format	PDF
ISSN	03615235
Journal	Journal of Electronic Materials
Volume Number	30
Issue Number	4
e-ISSN	1543186X
Language	English
Publisher	Springer-Verlag
Publisher Date	2001-01-01
Publisher Place	New York
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	ULSI interconnects Cu metallization barrier layers Optical and Electronic Materials Characterization and Evaluation of Materials Electronics and Microelectronics, Instrumentation Solid State Physics and Spectroscopy
Content Type	Text
Resource Type	Article
Subject	Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering

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