NDLI: Comparison between TiAl and TiAlNiAu ohmic contacts to n-type GaN

Content Provider	Springer Nature Link
Author	Boudart, B. Trassaert, S. Wallart, X. Pesant, J. C. Yaradou, O. Théron, D. Crosnier, Y. Lahreche, H. Omnes, F.
Copyright Year	2000
Abstract	We report a comparison between Ti/Al and Ti/Al/Ni/Au ohmic contacts in terms of contact resistivity, thermal stability, depth profile, and surface morphology. The metals were deposited by conventional electron-beam evaporation, and then annealed at 900°C for 30 s in a N$_{2}$ atmosphere. The lowest value for the specific contact resistivity was obtained using Ti/Al/Ni/Au metallization. Ti/Al/Ni/Au contacts showed no increase in contact resistivity after aging for five days at 600°C in an air atmosphere. Examination of the surface morphology using atomic force microscopy revealed that the surface roughness was clearly better in the case of Ti/Al/Ni/Au contacts. X-ray photoelectron spectroscopy was also employed and gave primary results of Ti/Al/Ni/Au contact formation.
Starting Page	603
Ending Page	606
Page Count	4
File Format	PDF
ISSN	03615235
Journal	Journal of Electronic Materials
Volume Number	29
Issue Number	5
e-ISSN	1543186X
Language	English
Publisher	Springer-Verlag
Publisher Date	2000-01-01
Publisher Place	New York
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	GaN ohmic contacts XPS AFM aging tests Optical and Electronic Materials Characterization and Evaluation of Materials Electronics and Microelectronics, Instrumentation Solid State Physics and Spectroscopy
Content Type	Text
Resource Type	Article
Subject	Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering

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