NDLI: Effect of Annealing on the Characteristics of Pd/Au Contacts to p-Type GaN/Al$_{0.45}$Ga$

Content Provider	Springer Nature Link
Author	Bai, Y. Liu, J. Shen, H.J. Ma, P. Liu, X.Y. Guo, L.W.
Copyright Year	2012
Abstract	The effect of annealing on the characteristics of Pd/Au contacts to p-type GaN/Al$_{0.45}$Ga$_{0.55}$N was investigated. The electrical characteristics of Pd/Au contacts and a p-GaN/AlGaN sample were measured after annealing at different temperatures from 550°C to 850°C. Changes in the surface electrical characteristic of p-GaN/AlGaN material were observed after each annealing step. It is indicated that the surface electrical characteristic of p-GaN/AlGaN material plays an important role in the current transport through Pd/Au pads. A possible reason for those changes is impurity contamination, most likely oxygen and carbon contamination introduced from processing. The microstructure of Pd on p-GaN/AlGaN was investigated by glancing-incidence x-ray diffraction (GXRD). The results of GXRD show that the AlPd$_{2}$ and GaPd$_{2}$ phases were formed at the interface after annealing, and the formation of these phases could be effective for forming ohmic contacts on p-GaN/AlGaN.
Starting Page	3021
Ending Page	3026
Page Count	6
File Format	PDF
ISSN	03615235
Journal	Journal of Electronic Materials
Volume Number	41
Issue Number	11
e-ISSN	1543186X
Language	English
Publisher	Springer US
Publisher Date	2012-07-20
Publisher Place	Boston
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	High-Al-content AlGaN ohmic contacts annealing GXRD Solid State Physics Optical and Electronic Materials Electronics and Microelectronics, Instrumentation Characterization and Evaluation of Materials
Content Type	Text
Resource Type	Article
Subject	Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering

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