NDLI: Reaction Mechanism and Mechanical Properties of the Flip-Chip Sn-3.0Ag-0.5Cu Solder Bump with Cu/Ni-xCu/Ti Underbump Metallization After Various Reflows

Content Provider	Springer Nature Link
Author	Peng, Chung Nan Duh, Jenq Gong
Copyright Year	2009
Abstract	Ni underbump metallization (UBM) has been widely used as the diffusion barrier between solder and Cu pads. To retard the fast dissolution rate of Ni UBM, Cu was added into Ni thin films. The Ni-Cu UBM can provide extra Cu to the solders to maintain the Cu$_{6}$Sn$_{5}$ intermetallic compound (IMC) at the interface, which can thus significantly decrease the Ni dissolution rate. In this study, the Cu content of the sputtered Cu/Ni-xCu/Ti UBM was varied from 0 wt.% to 20 wt.%. Sn-3Ag-0.5Cu solder was reflowed with Cu/Ni-Cu/Ti UBM one, three, and five times. Reflow and cooling conditions altered the morphology of the IMCs formed at the interface. The amount of (Cu,Ni)$_{6}$Sn$_{5}$ increased with increasing Cu content in the Ni-Cu film. The Cu concentration of the intermetallic compound was strongly dependent on the composition of the Ni-Cu films. The results of this study suggest that Cu-rich Ni-xCu UBM can be used to suppress interfacial spalling and improve shear strength and pull strength of solder joints.
Starting Page	2543
Ending Page	2553
Page Count	11
File Format	PDF
ISSN	03615235
Journal	Journal of Electronic Materials
Volume Number	38
Issue Number	12
e-ISSN	1543186X
Language	English
Publisher	Springer US
Publisher Date	2009-09-12
Publisher Place	Boston
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Sn-3Ag-0.5Cu solder Cu/Ni-xCu/Ti UBM spalling shear strength pull strength Solid State Physics Electronics and Microelectronics, Instrumentation Characterization and Evaluation of Materials Optical and Electronic Materials
Content Type	Text
Resource Type	Article
Subject	Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering

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