NDLI: Electrical and Switching Phenomenon of Se$_{80}$Ge$_{20−x }$Cd$_{ x }$ (0 ≤ x ≤ 12 at.%) Amorphous System

Content Provider	Springer Nature Link
Author	Afifi, M.A. Hegab, N.A. Shakra, A.M. Farid, A.S. Alrebati, A.M.
Copyright Year	2014
Abstract	Se$_{80}$Ge$_{20−x }$Cd$_{ x }$ (0 ≤ x ≤ 12 at.%) compositions were prepared by the conventional melt quenching technique. Thin films with different thicknesses (200–620 nm) were deposited by thermal evaporation technique. Energy dispersive x-ray spectroscopy technique showed that the films are nearly stoichiometric. X-ray diffraction (XRD) patterns indicate that the films are in amorphous state. The DC conductivity and switching properties were investigated in the temperature range (293–393 K) below the corresponding glass transition temperature. The obtained results of DC conductivity showed that it increases with increasing Cd content in the considered system as well as with film thickness through the studied range of thickness. The conduction activation energy has two values, ΔE $_{ σ1}$ and ΔE $_{ σ2}$, indicating the presence of two different conduction mechanisms through the studied range of temperature. The obtained results of the temperature dependence of DC conductivity are explained in accordance with the Mott and Davis model for electrical conduction. The current–voltage (I–V) characteristic curves were studied for the investigated samples and found to be typical for a memory switch. The mean value of the threshold voltage $$\overline{{V}}_{\rm{th}}$$ was found to increase linearly with film thickness and decrease exponentially with temperature in the investigated ranges of thickness and temperature. The threshold voltage activation energy ε $_{th}$ for the investigated samples was calculated from the corresponding temperature dependence of $$\overline{{V}}_{\rm{th}}$$ . The switching phenomenon observed in these films is explained in accordance with the electrothermal effect initiated by Joule heating for the switching process. The effect of Cd content on the studied parameters was also investigated.
Starting Page	87
Ending Page	95
Page Count	9
File Format	PDF
ISSN	03615235
Journal	Journal of Electronic Materials
Volume Number	44
Issue Number	1
e-ISSN	1543186X
Language	English
Publisher	Springer US
Publisher Date	2014-09-19
Publisher Place	Boston
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Switching phenomenon Se-Ge-Cd films chalcogenide glasses Optical and Electronic Materials Characterization and Evaluation of Materials Electronics and Microelectronics, Instrumentation Solid State Physics
Content Type	Text
Resource Type	Article
Subject	Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering

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