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| Content Provider | Springer Nature Link |
|---|---|
| Author | Guo, Jianqiu Yang, Yu Raghothamachar, Balaji Kim, Jungyu Dudley, Michael Chung, Gilyong Sanchez, Edward Quast, Jeffrey Manning, Ian |
| Copyright Year | 2016 |
| Abstract | Basal plane slip is the most frequently observed deformation mechanism in 4H-type silicon carbon (4H-SiC) single crystals grown by the physical vapor transport (PVT) method. However, it was recently reported that dislocations in such crystals can also glide in prismatic slip systems. In this study, we observed nonuniform distributions of three sets of prismatic dislocations in a commercial 4H-SiC substrate wafer. The nonuniformity is a result of the distribution of resolved shear stress on each prismatic slip system caused by radial thermal gradients in the growing crystal boule. A radial thermal model has been developed to estimate the thermal stress across the entire area of the crystal boule during PVT growth. The model results show excellent agreement with the observations, confirming that radial thermal gradients play a key role in activating prismatic slip in 4H-SiC during bulk growth. |
| Starting Page | 2040 |
| Ending Page | 2044 |
| Page Count | 5 |
| File Format | |
| ISSN | 03615235 |
| Journal | Journal of Electronic Materials |
| Volume Number | 46 |
| Issue Number | 4 |
| e-ISSN | 1543186X |
| Language | English |
| Publisher | Springer US |
| Publisher Date | 2016-11-28 |
| Publisher Place | New York |
| Access Restriction | One Nation One Subscription (ONOS) |
| Subject Keyword | Silicon carbide physical vapor transport bulk growth x-ray topography prismatic dislocations Optical and Electronic Materials Characterization and Evaluation of Materials Electronics and Microelectronics, Instrumentation Solid State Physics |
| Content Type | Text |
| Resource Type | Article |
| Subject | Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering |
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