NDLI: Growth of Thick Epitaxial CdTe Films by Close Space Sublimation

Content Provider	Springer Nature Link
Author	Jiang, Q. Brinkman, A. W. Cantwell, B. J. Mullins, J. T. Dierre, Fabrice Basu, A. Veeramani, P. Sellin, P.
Copyright Year	2009
Abstract	This paper reports on a detailed study of the development of the close space sublimation method, which has been widely used in the preparation of polycrystalline CdTe/CdS solar cells, as an epitaxial method for the growth of thick CdTe single crystal films over 200 μm on GaAs and Ge substrates for high-energy radiation detectors. The resulting microscopic growth phenomena in the process are also discussed in this paper. High-quality single crystalline CdTe thick films were prepared with x-ray rocking curves full width at half maximum (FWHM) values, which were ∼100 arcsec on Ge substrates and 300 arcsec on GaAs substrates. The quality of thick films on Ge(100) showed a substantial improvement with nucleation in a Te-rich growth environment. No Te inclusions in the CdTe films grown on GaAs(211)B and Ge(100) were observed with IR transmission imaging. Photoluminescence of CdTe/Ge shows a large reduction in the 1.44 eV defect energy bands compared with films grown on GaAs substrates. The film resistivity is on the order of 10$^{10}$ Ω cm, and the film displayed some sensitivity to alpha particles.
Starting Page	1548
Ending Page	1553
Page Count	6
File Format	PDF
ISSN	03615235
Journal	Journal of Electronic Materials
Volume Number	38
Issue Number	8
e-ISSN	1543186X
Language	English
Publisher	Springer US
Publisher Date	2009-04-21
Publisher Place	Boston
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	CdTe detector epitaxy thick film Solid State Physics and Spectroscopy Electronics and Microelectronics, Instrumentation Characterization and Evaluation of Materials Optical and Electronic Materials
Content Type	Text
Resource Type	Article
Subject	Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Selective Growth of CdTe on Nano-patterned CdS via Close-Space Sublimation

Growth of thick CdTe epilayers on GaAs substrates and evaluation of CdTe/n$^{+}$-GaAs heterojunction diodes for an X-ray imaging detector

Selective growth of CdTe on Si and GaAs substrates using metalorganic vapor phase epitaxy

Metal-organic vapor-phase epitaxy growth and characterization of thick (100) CdTe layers on (100) GaAs and (100) GaAs/Si substrates

Effect of Deposition Temperature on the Properties of CdTe Thin Films Prepared by Close-Spaced Sublimation

Characterization of Smooth CdTe(111) Films by the Conventional Close-Spaced Sublimation Technique

Strain effects in CdTe (111) epitaxial layers grown on GaAs (100) substrates by molecular beam epitaxy

Selective area epitaxy of CdTe

Anisotropy in selective metalorganic vapor phase epitaxy of CdTe on GaAs and Si substrates

Growth of Thick Epitaxial CdTe Films by Close Space Sublimation

Similar Documents

Selective Growth of CdTe on Nano-patterned CdS via Close-Space Sublimation

Growth of thick CdTe epilayers on GaAs substrates and evaluation of CdTe/n$^{+}$-GaAs heterojunction diodes for an X-ray imaging detector

Selective growth of CdTe on Si and GaAs substrates using metalorganic vapor phase epitaxy

Metal-organic vapor-phase epitaxy growth and characterization of thick (100) CdTe layers on (100) GaAs and (100) GaAs/Si substrates

Effect of Deposition Temperature on the Properties of CdTe Thin Films Prepared by Close-Spaced Sublimation

Characterization of Smooth CdTe(111) Films by the Conventional Close-Spaced Sublimation Technique

Strain effects in CdTe (111) epitaxial layers grown on GaAs (100) substrates by molecular beam epitaxy

Selective area epitaxy of CdTe

Anisotropy in selective metalorganic vapor phase epitaxy of CdTe on GaAs and Si substrates

Growth of Thick Epitaxial CdTe Films by Close Space Sublimation