NDLI: Selective area epitaxy of CdTe

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Journal of Electronic Materials : Volume 26, Issue 12, December 1997

Journal of Electronic Materials : Volume 26, Issue 1, December 1997

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Molecular beam epitaxial growth and performance of integrated two-color HgCdTe detectors operating in the mid-wave infrared band

MOCVD of bandgap-engineered HgCdTe p-n-N-P dual-band infrared detector arrays

MBE-grown HgCdTe multi-layer heterojunction structures for high speed low-noise 1.3–1.6 µm avalanche photodetectors

Improving material characteristics and reproducibility of MBE HgCdTe

Spectroscopic ellipsometry for monitoring and control of molecular beam epitaxially grown HgCdTe heterostructures

Strain effects in CdTe (111) epitaxial layers grown on GaAs (100) substrates by molecular beam epitaxy

Selective area epitaxy of CdTe

Lattice mismatch induced morphological features and strain in HgCdTe epilayers on CdZnTe substrates

Optimization of the structural properties of Hg$_{1−x}$ Cd$_{x}$Te (x = 0.18−0.30) alloys: Growth and modeling

Investigation of the effects of polishing and etching on the quality of Cd$_{1−x}$Zn$_{x}$Te using spatial mapping techniques

The use of atomic hydrogen for substrate cleaning for subsequent growth of II-VI semiconductors

Surface cleaning and etching of CdZnTe and CdTe in H$_{2}$/Ar, CH$_{4}$/H$_{2}$/Ar, and CH$_{4}$/H$_{2}$/N$_{2}$/Ar electron cyclotron resonance plasmas

Surface passivation of HgCdTe by CdZnTe and its characteristics

New surface treatment method for improving the interface characteristics of CdTe/Hg$_{1−x}$Cd$_{x}$Te heterostructure

Temperature dependence of the optical properties of Hg$_{1−x}$Cd$_{x}$Te

Application of urbach rule optical absorption to composition measurement of Cd$_{1−y}$Zn$_{y}$Te

Electronic structure, absorption coefficient, and auger rate in HgCdTe and thallium-based alloys

Evaluation of low-temperature interdiffusion coefficients in Hg-based superlattices by monitoring the E$_{1}$ reflectance peak

Inter-layer subb and mixing in MBE-grown HgTe/CdTe superlattices

Improved determination of matrix compostion of Hg$_{1−x}$Cd$_{x}$Te by SIMS

An optical alternative to the hall test

X-ray rocking curve analysis of ion implanted mercury cadmium telluride

Characterization of CdTe/Hg$_{1−x}$Cd$_{x}$Te heterostructures by high-resolution x-ray diffraction

Surface cracking in Zinc diffused CdTe

Numerical simulation of clustering phenomena for point-defects in HgCdTe

Mode of arsenic incorporation in HgCdTe grown by MBE

Behavior of p-type dopants in HgCdTe

Modeling of junction formation and drive-in in ion implanted HgCdTe

Characterization of HgCdTe p-on-n heterojunction photodiodes and their defects using variable-area test structures

1/f noise studies in uncooled narrow gap Hg$_{1−x}$Cd$_{x}$Te non-equilibrium diodes

High performance SWIR HgCdTe detector arrays

VSWIR to VLWIR MBE grown HgCdTe material and detectors for remote sensing applications

Photocurrent effect on the zero-Bias dynamic resistance of HgCdTe photodiode

Resonant-cavity infrared optoelectronic devices

Modeling of heterojunction HgCdTe photodiodes using approximate k • p approach

Device modeling of HgCdTe vertically integrated photodiodes

Thermodynamical properties of thallium-based III-V materials

Applications of thermodynamical modeling in molecular beam epitaxy of Cd$_{x}$Hg$_{1-x}$Te

Structural properties of ZnS$_{y}$ Se$_{1−y}$ZnSe/GaAs (001) heterostructures grown by photoassisted metalorganic vapor phase epitaxy

Molecular beam epitaxial growth of P-ZnSe:N using a novel plasma source

A comparison of ethyl iodide and hydrogen chloride for doping ZnSe grown by photoassisted MOVPE

Degradation of ZnSe/ZnTe multiquantum well contacts to p-ZnSe

New mechanisms in photo-assisted MOVPE of II-VI semiconductors

Gas source molecular beam epitaxy growth of SrS:Ce for flat panel displays

Photoluminescence of nitrogen-doped zinc selenide epilayers

New developments in CdTe and CdZnTe detectors for X and γ-ray applications

Fabrication and characterization of CdZnTe radiation detectors with a new P-I-N design

Linear x-ray detector array made on bulk CdZnTe for 30∼100 keV energy

Study of contacts to CdZnTe radiation detectors

Development of a 64 × 64 CdZnTe array and associated readout integrated circuit for use in nuclear medicine

Journal of Electronic Materials : Volume 26, Issue 5, May 1997

Journal of Electronic Materials : Volume 26, Issue 4, April 1997

Journal of Electronic Materials : Volume 26, Issue 3, March 1997

Journal of Electronic Materials : Volume 26, Issue 2, February 1997

Selective area epitaxy of CdTe

Content Provider	Springer Nature Link
Author	Luo, Y. Y. Cavus, A. Tamargo, M. C.
Copyright Year	1997
Abstract	We have performed selective area epitaxy (SAE) of CdTe layers grown by molecular beam epitaxy using a shadow mask technique. This technique was chosen over other SAE techniques due to its simplicity and its compatibility with multiple SAE patterning steps. Features as small as 50 microns × 50 microns were obtained with sharp, abrupt side walls and flat mesa tops. Separations between mesas as small as 20 microns were also obtained. Shadowing effects due to the finite thickness of the mask were reduced by placing the CdTe source in a near normal incidence position. Intimate contact between the mask and the substrate was essential in order to achieve good pattern definition.
Starting Page	511
Ending Page	514
Page Count	4
File Format	PDF
ISSN	03615235
Journal	Journal of Electronic Materials
Volume Number	26
Issue Number	6
e-ISSN	1543186X
Language	English
Publisher	Springer-Verlag
Publisher Date	1997-01-01
Publisher Place	New York
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	CdTe in-situ patterning molecular beam epitaxy patterned growth shadow mask Optical and Electronic Materials Characterization and Evaluation of Materials Electronics and Microelectronics, Instrumentation Solid State Physics and Spectroscopy
Content Type	Text
Resource Type	Article
Subject	Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering

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