NDLI: Crystallization and electrical properties of (Ba$_{0.4}$Pb$_{0.3}$)Sr$_{0.3}$TiO$_{3}$ thin film by pulsed laser deposition

Content Provider	Springer Nature Link
Author	Yang, Weiming Yu, Jun He, Linxiang Zhou, Shen Yang, Guang
Copyright Year	2007
Abstract	(Ba$_{0.4}$Pb$_{0.3}$)Sr$_{0.3}$TiO$_{3}$ thin films were fabricated via pulsed laser deposition (PLD) technique on Pt/TiO$_{2}$/SiO$_{2}$/Si substrate. The crystallization of the films was characterized by XRD and FSEM, and the experimental results suggested deposition parameters, especially the deposition temperature was the key factor in forming the perovskite structure. The dielectric properties of the film deposited with optimized parameters were studied by an Agilent 4294A impedance analyzer at 1 MHz. The dielectric constant was 772, and the loss tangent was 0.006. In addition, the well-shaped hysteresis loop also showed that the film had a well performance in ferroelectric. The saturated polarization P $_{s}$, remnant polarization P $_{r}$ and coercive field E $_{c}$ were about 4.6 μC/cm$^{2}$, 2.5 μC/cm$^{2}$ and 23 kV/cm (the coercive voltage is 0.7 V), respectively. It is suggested the film should be a promising candidate for microwave applications and nonvolatile ferroelectric random access memories (NvFeRAMs).
Starting Page	634
Ending Page	637
Page Count	4
File Format	PDF
ISSN	10002413
Journal	Journal of Wuhan University of Technology-Mater. Sci. Ed.
Volume Number	22
Issue Number	4
e-ISSN	19930437
Language	English
Publisher	Wuhan University of Technology
Publisher Date	2007-01-01
Publisher Place	Wuhan
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	(Ba$_{0.4}$Pb$_{0.3}$)Sr$_{0.3}$TiO$_{3}$ thin film PLD dielectric properties ferroelectric properties Materials Science
Content Type	Text
Resource Type	Article
Subject	Materials Science

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