NDLI: Tunneling Intensity Enhancement of Resonant Tunneling Effects Caused by Surface Plasmon Excitations

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Tunneling Intensity Enhancement of Resonant Tunneling Effects Caused by Surface Plasmon Excitations

Content Provider	Springer Nature Link
Author	Lee, Peng Hsiao Lan, Yung Chiang
Copyright Year	2010
Abstract	This study investigates whether the resonant tunneling intensity of one groove of a metal film with periodic grooves on both surfaces can be enhanced by adjusting the relative permittivity of adjacent grooves of the emitting plane. As the relative permittivity of the side grooves of the emitting plane increases, the emission intensity of the center groove first increases but eventually saturates. This property is mainly attributable to concentration of incident intensity in the center groove of the incident plane. Larger numbers of lumped grooves or larger distances between two adjacent grooves increases the intensity of light entering the system, which ultimately increases the intensity of emitted light. This enhanced emission intensity achieved by resonant tunneling effects has potential applications in future plasmonic transistor designs.
Starting Page	183
Ending Page	187
Page Count	5
File Format	PDF
ISSN	15571955
Journal	Plasmonics
Volume Number	5
Issue Number	2
e-ISSN	15571963
Language	English
Publisher	Springer US
Publisher Date	2010-02-23
Publisher Place	Boston
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Surface plasmons Tunneling Biochemistry Biophysics and Biological Physics Nanotechnology Biotechnology
Content Type	Text
Resource Type	Article
Subject	Nanoscience and Nanotechnology Biochemistry Biophysics Biotechnology

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