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| Content Provider | Springer Nature Link |
|---|---|
| Author | Wei qi, Huang Shi rong, Liu Chao jian, Qin Cai, Shao hong Xu, Li Wu, Ke yue |
| Copyright Year | 2007 |
| Abstract | Some kinds of low-dimensional nanostructures can be formed by the irradiation of laser on a pure silicon sample and SiGe alloy sample. We have studied the photoluminescence (PL) of the hole-net structure of silicon and the porous structure of SiGe where the PL intensity at 706 nm and 725 nm wavelength increases obviously. The effect of intensity-enhancing in the PL peaks cannot be explained within the quantum confinement alone. We propose a mechanism on the increasing PL emission in the above structures, in which the trap state of the interface between SiO$_{2}$ and nanocrystal plays an important role. |
| Starting Page | 72 |
| Ending Page | 75 |
| Page Count | 4 |
| File Format | |
| ISSN | 16733487 |
| Journal | Frontiers of Physics |
| Volume Number | 2 |
| Issue Number | 1 |
| e-ISSN | 16733606 |
| Language | English |
| Publisher | Higher Education Press |
| Publisher Date | 2007-01-01 |
| Publisher Institution | Chinese Universities |
| Publisher Place | Beijing |
| Access Restriction | Subscribed |
| Subject Keyword | low-dimensional nanostructures photoluminescence PL intensity interface state Structural modeling: serial-addition models, computer simulation Physics |
| Content Type | Text |
| Resource Type | Article |
| Subject | 3100/3101 |
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