NDLI: Effect of reactor pressure on the growth rate and structural properties of GaN films

Content Provider	Springer Nature Link
Author	Ni, JinYu Hao, Yue Zhang, JinCheng Yang, LinAn
Copyright Year	2009
Abstract	The effect of reactor pressure on the growth rate, surface morphology and crystalline quality of GaN films grown on sapphire by metalorganic chemical vapor deposition is studied. The results show that as the reactor pressure increases from 2500 to 20000 Pa, the GaN surface becomes rough and the growth rate of GaN films decreases. The rough surface morphology is associated with the initial high temperature GaN islands, which are large with low density due to low adatom surface diffusion under high reactor pressure. These islands prolong the occurrence of 2D growth mode and decrease the growth rate of GaN film. Meanwhile, the large GaN islands with low density lead to the reduction of threading dislocation density during subsequent island growth and coalescence, and consequently decrease the full width at half maximum of X-ray rocking curve of the GaN film.
Starting Page	2595
Ending Page	2598
Page Count	4
File Format	PDF
ISSN	10016538
Journal	Chinese Science Bulletin
Volume Number	54
Issue Number	15
e-ISSN	18619541
Language	English
Publisher	SP Science in China Press
Publisher Date	2009-05-13
Publisher Place	Heidelberg
Access Restriction	Subscribed
Subject Keyword	GaN reactor pressure growth rate surface morphology crystalline quality Engineering Earth Sciences Chemistry/Food Science Physics Life Sciences Science
Content Type	Text
Resource Type	Article
Subject	Multidisciplinary

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Effect of reactor pressure on the growth rate and structural properties of GaN films