NDLI: Influence of surface passivation on the minority carrier lifetime, Fe-B pair density and recombination center concentration

Content Provider	Springer Nature Link
Author	Li, Feng Ma, ZhongQuan Meng, XiaJie Lü, Peng Yu, ZhengShan He, Bo
Copyright Year	2010
Abstract	Three kinds of methods (0.08 mol/L iodine in ethanol, SiN$_{x}$:H, and 40% HF) are used to passivate solar-grade Czochralski (Cz) silicon wafers. Thereafter, minority carrier lifetime and Fe-B pair density of the wafers are measured using the microwave photo-conductance decay (μ-PCD) technique. Based on the measured minority carrier lifetime, it is found that the passivation quality achieved by 0.08 mol/L iodine in ethanol is the best, while that by 40% HF solution is the worst. For the identical wafer, the density distribution of Fe-B pairs is different when different passivation methods are used. When the wafers are passivated by SiN$_{x}$:H, there exists a close correlation between the distribution of minority carrier lifetime and the concentration distribution of Fe-B pairs. Furthermore, for wafers with high-quality passivation, there is a strong correlation between the recombination center concentration and the Fe-B pair density. All the analyses verify that the surface passivation quality of wafers influences the measurement results of minority carrier lifetime, Fe-B pair density and recombination center concentration.
Starting Page	1828
Ending Page	1833
Page Count	6
File Format	PDF
ISSN	10016538
Journal	Chinese Science Bulletin
Volume Number	55
Issue Number	17
e-ISSN	18619541
Language	English
Publisher	SP Science China Press
Publisher Date	2010-06-18
Publisher Place	Heidelberg
Access Restriction	Subscribed
Subject Keyword	microwave photo-conductance decay surface passivation minority carrier lifetime Fe-B pairs recombination centers Engineering Earth Sciences Chemistry/Food Science Physics Life Sciences Science
Content Type	Text
Resource Type	Article
Subject	Multidisciplinary

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