NDLI: Study on growing thick AlGaN layer on c-plane sapphire substrate and free-standing GaN substrate

Content Provider	Springer Nature Link
Author	Wang, DangHui Zhou, Hao Zhang, JinCheng Xu, ShengRui Zhang, LinXia Meng, FanNa Ai, Shan Hao, Yue
Copyright Year	2012
Abstract	In this study, the thick AlGaN epilayers have been grown on the c-plane sapphire substrate and the free-standing GaN substrate using low-temperature AlN nucleation layers by low-pressure metal-organic chemical vapor deposition (LPMOCVD). High resolution X-ray diffraction (HRXRD), atom force microscopy (AFM), scanning electron microscopy (SEM), photoluminescence (PL) and Raman scattering measurements have been employed to study the crystal quality, threading dislocation density, surface morphology, optical properties and phonon properties of thick AlGaN epifilms. The results indicate that AlGaN epifilms crystal quality can be improved greatly when grown on the free-standing GaN substrate. We calculated the threading dislocation density and found that thick AlGaN epifilm grown on the free-standing GaN substrate is much lower in total threading dislocation density than that grown on the sapphire substrate, although the surface morphology is rougher than that of sapphire substrate.
Starting Page	2383
Ending Page	2388
Page Count	6
File Format	PDF
ISSN	16747348
Journal	Science in China Series G
Volume Number	55
Issue Number	12
e-ISSN	18691927
Language	English
Publisher	SP Science China Press
Publisher Date	2012-11-29
Publisher Place	Heidelberg
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	metal-organic chemical vapor deposition crystal quality surface morphology AlN nucleation layer Physics Classical Continuum Physics Astronomy, Observations and Techniques
Content Type	Text
Resource Type	Article
Subject	Physics and Astronomy

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Study on growing thick AlGaN layer on c-plane sapphire substrate and free-standing GaN substrate

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