NDLI: Carrier transport and luminescence properties of n-type GaN

Content Provider	Springer Nature Link
Author	Zhang, Zeng Zhang, Rong Xie, ZiLi Liu, Bin Xiu, XiangQian Jiang, RuoLian Han, Ping Gu, ShuLin Shi, Yi Zheng, YouDou
Copyright Year	2008
Abstract	The surface morphology, electrical properties and optical properties of Si doped n-type GaN were investigated. The intentional SiH$_{4}$ doped GaN films were grown by metal organic chemical vapor deposition with the electron concentration varying from 3×10$^{16}$ cm$^{−3}$ to 5.4×10$^{18}$ cm$^{−3}$. The surface morphology shows that the roughness and dislocation pits increase as the mass flow rate of SiH$_{4}$ increases, which indicates that the quality of GaN degrades gradually. The activation energy of Si in GaN with different n concentrations varies from 12 to 22 meV, which may originate from the interactions of donor wave functions. The carrier transport mechanism with increasing temperature from 100 to 420 K was concluded as the complex effect of both impurity scattering and phonon scattering. The position of the near band edge emission peak was determined by both renormalization of the band gap and B-M effect. The intensity variations of the yellow luminescence could be explained by the change of Ga vacancy concentration caused by Si doping.
Starting Page	1046
Ending Page	1052
Page Count	7
File Format	PDF
ISSN	16721799
Journal	Science in China Series G
Volume Number	51
Issue Number	8
e-ISSN	18622844
Language	English
Publisher	SP Science in China Press
Publisher Date	2008-07-17
Publisher Place	Heidelberg
Access Restriction	Subscribed
Subject Keyword	n-type GaN morphology Hall-effect luminescence Astronomy Mechanics, Fluids, Thermodynamics Physics
Content Type	Text
Resource Type	Article
Subject	Physics and Astronomy

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