NDLI: Growth and characterization of 0.8-µm gate length AlGaN/GaN HEMTs on sapphire substrates

Content Provider	Springer Nature Link
Author	Wang, Xiaoliang Wang, Cuimei Hu, Guoxin Wang, Junxi Ran, Junxue Fang, Cebao Li, Jianping Zeng, Yiping Li, Jinmin Liu, Xinyu Liu, Jian Qian, He
Copyright Year	2005
Abstract	AlGaN/GaN high electron mobility transistor (HEMT) structures were grown on 2 inch sapphire substrates by MOCVD, and 0.8-µm gate length devices were fabricated and measured. It is shown by resistance mapping that the HEMT structures have an average sheet resistance of approximately 380 Θ/sq with a uniformity of more than 96%. The 1-mm gate width devices using the materials yielded a pulsed drain current of 784 mA/mm atV $_{gs}$=0.5 V andV $_{ds}$=7 V with an extrinsic transconductance of 200 mS/mm. A 20-GHz unity current gain cutoff frequency (f $_{T}$) and a 28-GHz maximum oscillation frequency (f $_{max}$) were obtained. The device with a 0.6-mm gate width yielded a total output power of 2.0 W/mm (power density of 3.33 W/mm) with 41% power added efficiency (PAE) at 4 GHz.
Starting Page	808
Ending Page	814
Page Count	7
File Format	PDF
ISSN	10092757
Journal	Science in China Series : Information Sciences
Volume Number	48
Issue Number	6
e-ISSN	18622836
Language	English
Publisher	Science in China Press
Publisher Date	2005-01-01
Publisher Place	Beijing
Access Restriction	Subscribed
Subject Keyword	HEMT GaN MOCVD power device Information Systems and Communication Service
Content Type	Text
Resource Type	Article
Subject	Computer Science

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