NDLI: Study on the thermal stability and electrical properties of the high-k dielectrics (ZrO$_{2}$)$_{ x }$(SiO$_{2}$)$

Content Provider	Springer Nature Link
Author	Lü, ShiCheng Yin, Jiang Xia, YiDong Gao, LiGang Liu, ZhiGuo
Copyright Year	2009
Abstract	(ZrO$_{2}$)$_{ x }$(SiO$_{2}$)$_{1−x }$ (Zr-Si-O) films with different compositions were deposited on p-Si(100) substrates by using pulsed laser deposition technique. X-ray photoelectron spectra (XPS) showed that these films remained amorphous after annealing at 800°C with RTA process in N$_{2}$ for 60 s. The XPS spectra indicated that Zr-Si-O films with x=0.5 suffered no obvious phase separation after annealing at 800°C, and no interface layer was formed between Zr-Si-O film and Si substrate. While Zr-Si-O films with x >0.5 suffered phase separation to precipitate ZrO$_{2}$ after annealing under the same condition, and SiO$_{2}$ was formed at the interface. To get a good interface between Zr-Si-O films and Si substrate, Zr-Si-O films with bi-layer structure (ZrO$_{2}$)$_{0.7}$(SiO$_{2}$)$_{0.3}$/(ZrO$_{2}$)$_{0.5}$(SiO$_{2}$)$_{0.5}$/Si was deposited. The electrical properties showed that the bi-layer Zr-Si-O film is of the lowest equivalent oxide thickness and good interface with Si substrate.
Starting Page	2222
Ending Page	2226
Page Count	5
File Format	PDF
ISSN	10069321
Journal	Science in China Series E: Technological Sciences
Volume Number	52
Issue Number	8
e-ISSN	1862281X
Language	English
Publisher	SP Science in China Press
Publisher Date	2009-07-01
Publisher Place	Heidelberg
Access Restriction	Subscribed
Subject Keyword	high-k dielectric film pulsed laser deposition pseudo ternary alloy Engineering
Content Type	Text
Resource Type	Article
Subject	Engineering Materials Science

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