NDLI: Fabrication and its characteristics of low-temperature polycrystalline silicon thin films

Content Provider	Springer Nature Link
Author	Wu, AiMin Deng, WanTing Qin, FuWen Li, BoHai Lassaut, J. Jiang, Xin Dong, Chuang
Copyright Year	2009
Abstract	In order to reduce the cost of solar cells or flat-panel display, it is very important to synthesis polycrystalline silicon films on low cost substrate such as glass at low temperature. In this work, electron cyclotron resonance (ECR) plasma enhanced chemical vapor deposition (PECVD) system was successfully applied to synthesize poly-Si thin-film on common glass substrate using H$_{2}$ as the plasma source and SiH$_{4}$ (Ar:SiH$_{4}$=19:1) as the precursor gas at low temperature. Since the multicusp cavity-coupling ECR plasma source was adopted to provide active precursors, the growth temperature decreased to lower than 200°C. In the plasma, the electron temperatures kT $_{e}$ are ∼2–3 eV and the ion temperatures kT $_{i}$≤1 eV. This leads to non-remarkable ion impacts during the film deposition. The characteristic of poly-Si films was investigated. It was shown that the crystalline fraction X $_{c}$ of the films can be up to 90% even deposit at room temperature, and the film was (220) preferably oriented. The growth behaviors of the film between the interface of glass and Si films were also discussed in detail.
Starting Page	260
Ending Page	263
Page Count	4
File Format	PDF
ISSN	10069321
Journal	Science in China Series E: Technological Sciences
Volume Number	52
Issue Number	1
e-ISSN	1862281X
Language	English
Publisher	SP Science in China Press
Publisher Date	2009-01-14
Publisher Place	Heidelberg
Access Restriction	Subscribed
Subject Keyword	ECR-PECVD poly silicon low temperature glass substrate Engineering
Content Type	Text
Resource Type	Article
Subject	Engineering Materials Science

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Self-aligned planar metal double-gate low-temperature polycrystalline-silicon thin-film transistors on glass substrate

A novel technology for in situ MIC growth of low temperature nano/poly silicon thin film on ITO glass substrate

Low temperature fabrication of thin film polycrystalline Si solar cell on the glass substrate and its application to the a-Si:H/polycrystalline Si tandem solar cell

Low-temperature direct deposition of polycrystalline silicon thin film on glass substrate by RF magnetron sputtering with applied substrate bias

Self-Aligned Planar Metal Double-Gate Polycrystalline-Silicon Thin-Film Transistors Fabricated at Low Temperature on Glass Substrate

Direct fabrication of poly-SiGe thin films on amorphous substrates and its application to bottom-gate TFTs

Fabrication of poly-Si thin film on glass substrate by aluminum-induced crystallization

Thin-film polycrystalline Si solar cell on glass substrate fabricated by a novel low temperature process

Opto-Structural Properties of Silicon Nitride Thin Films Deposited by ECR-PECVD

Fabrication and its characteristics of low-temperature polycrystalline silicon thin films

Similar Documents

Self-aligned planar metal double-gate low-temperature polycrystalline-silicon thin-film transistors on glass substrate

A novel technology for in situ MIC growth of low temperature nano/poly silicon thin film on ITO glass substrate

Low temperature fabrication of thin film polycrystalline Si solar cell on the glass substrate and its application to the a-Si:H/polycrystalline Si tandem solar cell

Low-temperature direct deposition of polycrystalline silicon thin film on glass substrate by RF magnetron sputtering with applied substrate bias

Self-Aligned Planar Metal Double-Gate Polycrystalline-Silicon Thin-Film Transistors Fabricated at Low Temperature on Glass Substrate

Direct fabrication of poly-SiGe thin films on amorphous substrates and its application to bottom-gate TFTs

Fabrication of poly-Si thin film on glass substrate by aluminum-induced crystallization

Thin-film polycrystalline Si solar cell on glass substrate fabricated by a novel low temperature process

Opto-Structural Properties of Silicon Nitride Thin Films Deposited by ECR-PECVD

Fabrication and its characteristics of low-temperature polycrystalline silicon thin films