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  1. Science in China Series E: Technological Sciences
  2. Science in China Series E: Technological Sciences : Volume 59
  3. Science in China Series E: Technological Sciences : Volume 59, Issue 9, September 2016
  4. Fabrication of iridium oxide neural electrodes at the wafer level
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Science in China Series E: Technological Sciences : Volume 60
Science in China Series E: Technological Sciences : Volume 59
Science in China Series E: Technological Sciences : Volume 59, Issue 12, December 2016
Science in China Series E: Technological Sciences : Volume 59, Issue 11, November 2016
Science in China Series E: Technological Sciences : Volume 59, Issue 10, October 2016
Science in China Series E: Technological Sciences : Volume 59, Issue 9, September 2016
A method for detection and quantification of meshing characteristics of harmonic drive gears using computer vision
Stripe theory based numerical method for solving asymmetrical hysteresis of friction force in linear rolling guideways
Mesh stiffness evaluation of an internal spur gear pair with tooth profile shift
Cold plasma redistribution throughout geospace
Improved position estimates for the Chinese Deep Space Station Kashi derived by geodetic very long baseline interferometry
Constructal entransy dissipation rate minimization of a rectangular body with nonuniform heat generation
Study on dynamic response of multi-body structure under explosive driving
Synergetic effects of blended materials for Lithium-ion batteries
Polyvinylpyrrolidone/graphene oxide thin films coated on quartz crystal microbalance electrode for NH$_{3}$ detection at room temperature
Azobenzene/graphene hybrid for high-density solar thermal storage by optimizing molecular structure
Investigation of shunt solar cells’ currents based on equivalent circuit model
Fabrication of iridium oxide neural electrodes at the wafer level
Full-solution-processed high mobility zinc-tin-oxide thin-film-transistors
Analysis and comparison of three leg models for bionic locust robot based on landing buffering performance
Modeling and prediction for the thrust on EPB TBMs under different geological conditions by considering mechanical decoupling
Hybrid membrane computing and pigeon-inspired optimization algorithm for brushless direct current motor parameter design
Parameter sensitivity and inversion analysis of a concrete faced rock-fill dam based on HS-BPNN algorithm
Modeling of strength and deformation of overconsolidated clays based on bounding surface plasticity
Science in China Series E: Technological Sciences : Volume 59, Issue 8, August 2016
Science in China Series E: Technological Sciences : Volume 59, Issue 6, June 2016
Science in China Series E: Technological Sciences : Volume 59, Issue 5, May 2016
Science in China Series E: Technological Sciences : Volume 59, Issue 4, April 2016
Science in China Series E: Technological Sciences : Volume 59, Issue 3, March 2016
Science in China Series E: Technological Sciences : Volume 59, Issue 2, February 2016
Science in China Series E: Technological Sciences : Volume 59, Issue 1, January 2016
Science in China Series E: Technological Sciences : Volume 58
Science in China Series E: Technological Sciences : Volume 57
Science in China Series E: Technological Sciences : Volume 56
Science in China Series E: Technological Sciences : Volume 55
Science in China Series E: Technological Sciences : Volume 54
Science in China Series E: Technological Sciences : Volume 53
Science in China Series E: Technological Sciences : Volume 52
Science in China Series E: Technological Sciences : Volume 51
Science in China Series E: Technological Sciences : Volume 50
Science in China Series E: Technological Sciences : Volume 49
Science in China Series E: Technological Sciences : Volume 48
Science in China Series E: Technological Sciences : Volume 47
Science in China Series E: Technological Sciences : Volume 46
Science in China Series E: Technological Sciences : Volume 45
Science in China Series E: Technological Sciences : Volume 44
Science in China Series E: Technological Sciences : Volume 43
Science in China Series E: Technological Sciences : Volume 42
Science in China Series E: Technological Sciences : Volume 41
Science in China Series E: Technological Sciences : Volume 40

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Fabrication of iridium oxide neural electrodes at the wafer level

Content Provider Springer Nature Link
Author Zhang, He Pei, WeiHua Zhao, ShanShan Yang, XiaoWei Liu, RuiCong Liu, YuanYuan Wu, Xian Guo, DongMei Gui, Qiang Guo, XuHong Xing, Xiao Wang, YiJun Chen, HongDa
Copyright Year 2016
Abstract Electro-deposition, electrical activation, thermal oxidation, and reactive ion sputtering are the four primary methods to fabricate iridium oxide film. Among these methods, reactive ion sputtering is a commonly used method in standard micro-fabrication processes. In different sputtering conditions, the component, texture, and electrochemistry character of iridium oxide varies considerably. To fabricate the iridium oxide film compatible with the wafer-level processing of neural electrodes, the quality of iridium oxide film must be able to withstand the mechanical and chemical impact of post-processing, and simultaneously achieve good performance as a neural electrode. In this study, parameters of sputtering were researched and developed to achieve a balance between mechanical stability and good electrochemical characteristics of iridium oxide film on electrode. Iridium oxide fabricating process combined with fabrication flow of silicon electrodes, at wafer-level, is introduced to produce silicon based planar iridium oxide neural electrodes. Compared with bare gold electrodes, iridium oxide electrodes fabricated with this method exhibit particularly good electrochemical stability, low impedance of 386 kΩ at 1 kHz, high safe charge storage capacity of 3.2 mC/cm$^{2}$, and good impedance consistency of less than 25% fluctuation.
Starting Page 1399
Ending Page 1406
Page Count 8
File Format PDF
ISSN 16747321
Journal Science in China Series E: Technological Sciences
Volume Number 59
Issue Number 9
e-ISSN 18691900
Language English
Publisher Science China Press
Publisher Date 2016-09-04
Publisher Place Beijing
Access Restriction One Nation One Subscription (ONOS)
Subject Keyword reactive ion sputtering iridium oxide wafer-level neural electrode Engineering
Content Type Text
Resource Type Article
Subject Engineering Materials Science
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