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| Content Provider | Springer Nature Link |
|---|---|
| Author | Kuchinskaya, P. A. Zivyev, V. A. Nenashev, A. V. Armbrister, V. A. Volodin, V. A. Dvurechenskii, A. V. |
| Copyright Year | 2012 |
| Abstract | Results of experimental studies of forming SiGe nanometer-size rings on the Si(100) surface by the molecular-beam epitaxy method are presented. Detailed shapes and size distributions of the grown nanorings are studied by the atomic-force microscopy method. The elemental composition is determined by the Raman scattering method. The average germanium content in the nanorings was 37% for a forming temperature of 680°C. The obtained data on the geometry and composition of the produced nanostructures were used for calculations by the 6-band k × p-method of the energy spectrum and charge density distribution of hole states, localized on the SiGe quantum rings embedded in the Si-matrix. It is shown that the heterostructures with quantum SiGe rings are promising objects for creating devices that are capable of detecting electromagnetic radiation in terahertz and infrared wavelength ranges. |
| Starting Page | 485 |
| Ending Page | 488 |
| Page Count | 4 |
| File Format | |
| ISSN | 10637397 |
| Journal | Russian Microelectronics |
| Volume Number | 41 |
| Issue Number | 8 |
| e-ISSN | 16083415 |
| Language | English |
| Publisher | SP MAIK Nauka/Interperiodica |
| Publisher Date | 2012-11-17 |
| Publisher Place | Dordrecht |
| Access Restriction | One Nation One Subscription (ONOS) |
| Subject Keyword | Electrical Engineering |
| Content Type | Text |
| Resource Type | Article |
| Subject | Materials Chemistry Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering |
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