NDLI: Majority-Carrier Lifetime in the Potential Barrier of an MIS Capacitor under Monopolar Conditions

Content Provider	Springer Nature Link
Author	Penin, N. A.
Copyright Year	2004
Abstract	A theoretical study is reported of the lifetime–potential relationship for nonequilibrium, photogenerated carriers in the space-charge region of a semiconductor. The problem is addressed in the context of an MIS capacitor operated under monopolar conditions, the semiconductor being doped with deep-level acceptor impurity and partly compensated with shallow-level donor impurity. The temperature is taken to be so low that impurity atoms are weakly ionized. The magnitude and depth profile of carrier lifetime in the potential barrier are examined as functions of constant capacitor voltage. The major findings are the following: (i) The lifetime is voltage-selective in that the lifetime–surface-potential characteristic exhibits a relatively sharp peak when the capacitor is operated near the flat-band condition. (ii) The lifetime is maximal when the surface potential is negative (forward bias), the maximum lifetime being independent of the compensating-impurity concentration. (iii) With fixed impurity concentrations, the point of maximum lifetime moves away from the surface as the surface potential increases in absolute value.
Starting Page	152
Ending Page	158
Page Count	7
File Format	PDF
ISSN	10637397
Journal	Russian Microelectronics
Volume Number	33
Issue Number	3
e-ISSN	16083415
Language	English
Publisher	Kluwer Academic Publishers-Plenum Publishers
Publisher Date	2004-01-01
Publisher Place	New York
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Electronic and Computer Engineering
Content Type	Text
Resource Type	Article
Subject	Materials Chemistry Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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