NDLI: Direct Spectroscopic Evidence of the Influence of Chamber Wall Condition on Oxide Etch Rate

Content Provider	Springer Nature Link
Author	Lee, Szetsen Tien, Yu Chung Hsu, Chin Fa
Copyright Year	1999
Abstract	The drift of TEOS etch rate has been observed during MERIE oxide etch for the damascene process. The etch rate typically fluctuates between 5300 Å/min and 6000 Å/min. Studies using fluorocarbon-based chemistry show a normal TEOS etch rate when the chamber wall is heavily coated with polymer deposition. On the other hand, a lower etch rate appears when the chamber has less deposition. Hysteresis behavior has been observed during the etch rate of TEOS, as well as emission intensity trends of F, CF $_{x}$ (x=1~3), and SiF. From the observed emission intensity variation of F, CF $_{x}$ , and SiF, a model is proposed to explain the impact of chamber wall polymer deposition on the etch rate of TEOS. This model includes a mechanism of etch rate enhancement by embedding oxygen in the chamber wall polymer. From the correlation between etch rate and emission intensity, it clearly shows that F is directly responsible for the etch of TEOS. Compared to F, CF $_{x}$ plasma chemistry has a closer link to chamber wall polymer formation, but contributes less in the etch of TEOS.
Starting Page	285
Ending Page	298
Page Count	14
File Format	PDF
ISSN	02724324
Journal	Plasma Chemistry and Plasma Processing
Volume Number	19
Issue Number	2
e-ISSN	15728986
Language	English
Publisher	Kluwer Academic Publishers-Plenum Publishers
Publisher Date	1999-01-01
Publisher Place	New York
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Inorganic Chemistry Characterization and Evaluation Materials Mechanics Nuclear Physics, Heavy Ions, Hadrons Mechanical Engineering
Content Type	Text
Resource Type	Article
Subject	Chemistry Surfaces, Coatings and Films Condensed Matter Physics Chemical Engineering

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