NDLI: Effect of Wafer Temperature on High Aspect Ratio Hardmask Etching

Content Provider	Springer Nature Link
Author	Lee, S. Tien, Y. C. Chang, Y. W.
Copyright Year	2002
Abstract	Fluorocarbon-based chemistries were used to study the effect of wafer temperature on the etch of high aspect ratio hardmasks composed of SiO$_{2}$ and SiN$_{x}$ layers. It is found that etch stop can occur easily at high temperature. The rate of polymer deposition plays an important role in etch stop. The etching rates were found to be inversely proportional to the wafer temperature. Such a relation indicates a negative activation energy in the rate expression of hardmask etching using fluorocarbon plasma. It also implies that in hardmask etching, complicated gas-surface, but not simple one-step, reactions are involved. Different wafer surface temperature can provide different degree of activation for etching reactions. Analysis of etching rate and optical emission trends indicates that CF$_{x}$ may contribute more than F does in the etch of SiO$_{2}$ and SiN$_{x}$, since polymer-rich etching chemistries were used. Based on the temperature-dependent etching rate, we propose a reaction mechanism for the reaction trends observed in hardmask etching.
Starting Page	627
Ending Page	637
Page Count	11
File Format	PDF
ISSN	02724324
Journal	Plasma Chemistry and Plasma Processing
Volume Number	22
Issue Number	4
e-ISSN	15728986
Language	English
Publisher	Kluwer Academic Publishers-Plenum Publishers
Publisher Date	2002-01-01
Publisher Place	New York
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Inorganic Chemistry Characterization and Evaluation Materials Mechanics Nuclear Physics, Heavy Ions, Hadrons Mechanical Engineering
Content Type	Text
Resource Type	Article
Subject	Chemistry Surfaces, Coatings and Films Condensed Matter Physics Chemical Engineering

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