NDLI: Fluid Simulation of Capacitively Coupled HBr/Ar Plasma for Etching Applications

Content Provider	Springer Nature Link
Author	Gul, Banat Rehman, Aman ur
Copyright Year	2016
Abstract	In this work, a fluid model has been applied to study HBr/Ar capacitively coupled plasma discharges that are being used for anisotropic etching process. Based on time average reaction rates, the model identify the most dominant species in HBr/Ar plasma. Our simulation results show that the neutral species like H and Br, which are the key precursors in chemical etching, have bell shape distribution while ions like HBr$^{+}$, Br$^{+}$ and Ar$^{+}$ which plays a dominant role in the physical etching, have double humped distribution and shows peaks near electrodes. The effect of HBr/Ar mixing ratios on densities of dominant species are analyzed. The addition of Ar to HBr plasma decreases H, Br and HBr$^{+}$ densities slightly while increases Br$^{+}$ and Ar$^{+}$ densities. It was found that the dilution of HBr by Ar results in an increase in electron density and electron temperature, which results in more ionization and dissociation. The densities and hence the fluxes of the neutrals and positive ions for etching and subsequently chemical etching versus physical etching in HBr/Ar plasmas discharge can be controlled by tuning Ar concentration in the discharge and the desire etching can be achieved.
Starting Page	1363
Ending Page	1375
Page Count	13
File Format	PDF
ISSN	02724324
Journal	Plasma Chemistry and Plasma Processing
Volume Number	36
Issue Number	5
e-ISSN	15728986
Language	English
Publisher	Springer US
Publisher Date	2016-06-22
Publisher Place	New York
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	HBr plasma Chemical and physical etching Plasma simulation Sietching Inorganic Chemistry Mechanics Characterization and Evaluation of Materials Mechanical Engineering
Content Type	Text
Resource Type	Article
Subject	Chemistry Surfaces, Coatings and Films Condensed Matter Physics Chemical Engineering

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Numerical Study of HBr/He Discharges in Capacitive Coupled Plasma Reactor

Etching Characteristics and Mechanisms of TiO$_{2}$ Thin Films in HBr/Ar and Cl$_{2}$/Ar Inductively-Coupled Plasmas

Etching Characteristics and Mechanisms of TiO$_{2}$ Thin Films in CF$_{4}$ + Ar, Cl$_{2}$ + Ar and HBr + Ar Inductively Coupled Plasmas

A Comparative Study of HBr-Ar and HBr-Cl$_{2}$ Plasma Chemistries for Dry Etch Applications

A Model-Based Comparative Study of HCl and HBr Plasma Chemistries for Dry Etching Purposes

Applications of Plasma Technology in Development of Superhydrophobic Surfaces

Etching Mechanism of Pb(Zr,Ti)O$_{3}$ Thin Films in Cl$_{2}$/Ar Plasma

Etching Characteristics and Mechanisms of Mo and Al$_{2}$O$_{3}$ Thin Films in O$_{2}$/Cl$_{2}$/Ar Inductively Coupled Plasmas: Effect of Gas Mixing Ratios

Synthesis of Silicon Nanoparticles in Nonthermal Capacitively-Coupled Flowing Plasmas: Processes and Transport

Fluid Simulation of Capacitively Coupled HBr/Ar Plasma for Etching Applications

Similar Documents

Numerical Study of HBr/He Discharges in Capacitive Coupled Plasma Reactor

Etching Characteristics and Mechanisms of TiO$_{2}$ Thin Films in HBr/Ar and Cl$_{2}$/Ar Inductively-Coupled Plasmas

Etching Characteristics and Mechanisms of TiO$_{2}$ Thin Films in CF$_{4}$ + Ar, Cl$_{2}$ + Ar and HBr + Ar Inductively Coupled Plasmas

A Comparative Study of HBr-Ar and HBr-Cl$_{2}$ Plasma Chemistries for Dry Etch Applications

A Model-Based Comparative Study of HCl and HBr Plasma Chemistries for Dry Etching Purposes

Applications of Plasma Technology in Development of Superhydrophobic Surfaces

Etching Mechanism of Pb(Zr,Ti)O$_{3}$ Thin Films in Cl$_{2}$/Ar Plasma

Etching Characteristics and Mechanisms of Mo and Al$_{2}$O$_{3}$ Thin Films in O$_{2}$/Cl$_{2}$/Ar Inductively Coupled Plasmas: Effect of Gas Mixing Ratios

Synthesis of Silicon Nanoparticles in Nonthermal Capacitively-Coupled Flowing Plasmas: Processes and Transport

Fluid Simulation of Capacitively Coupled HBr/Ar Plasma for Etching Applications