NDLI: GeS$_{2}$ and GeSe$_{2}$ PECVD from GeCl$_{4}$ and Various Chalcogenide Precursors

Content Provider	Springer Nature Link
Author	Whitham, Patrick J. Strommen, Dennis P. Lundell, Sandra Lau, Lisa D. Rodriguez, Rene
Copyright Year	2014
Abstract	The plasma enhanced chemical vapor depositions of germanium chalcogenide thin films from germanium tetrachloride, hydrogen sulfide and alkyl chalcogenides were studied to determine the viability of these reagents for thin film deposition. Hydrogen sulfide is a commonly used reagent for this technique and was used to determine optimal reaction conditions for thin film deposition. Germanium tetrachloride, alkylsulfides and alkylselenides were also employed because of their lower potential toxicities and higher availabilities compared to their more typical congeners: germane, hydrogen sulfide and hydrogen selenide in the formation of germanium chalcogenides. Alkylsulfides were found to be unsuitable for the deposition of germanium sulfides, however alkylselenide precursors were used successfully for the deposition of germanium selenides. The relative mass flow rates, reactor pressure, substrate temperature and plasma power density were studied for their effects on germanium chalcogenide deposition. These parameters affected the composition, deposition rate, film quality, and spectroscopic properties of the deposited films.
Starting Page	755
Ending Page	766
Page Count	12
File Format	PDF
ISSN	02724324
Journal	Plasma Chemistry and Plasma Processing
Volume Number	34
Issue Number	4
e-ISSN	15728986
Language	English
Publisher	Springer US
Publisher Date	2014-04-02
Publisher Place	Boston
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Germanium sulfide PECVD Alkylsulfide Germanium selenide Inorganic Chemistry Mechanics Characterization and Evaluation of Materials Mechanical Engineering
Content Type	Text
Resource Type	Article
Subject	Chemistry Surfaces, Coatings and Films Condensed Matter Physics Chemical Engineering

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