NDLI: Non-destructive carrier concentration determination in InAs thin films for THz radiation generating devices using fast differential reflectance spectroscopy

Content Provider	Springer Nature Link
Author	Kozub, Michał A. Motyka, Marcin Dyksik, Mateusz Sęk, Grzegorz Misiewicz, Jan Nishisaka, Kazuichi Maemoto, Toshihiko Sasa, Shigehiko
Copyright Year	2016
Abstract	We present a fast and robust optical method of determining carrier concentrations in heavily doped layered structures. We discuss several advantages of the technique as compared to other, more commonly applied methods using as an example InAs based devices used for THz radiation generation. Our approach leads to a more accurate estimation of doping levels in the investigated structures and aids the standard Hall measurements in precise predictions of radiative efficacy in the THz region. Predicted enhancement factors reproduce THz-Time Domain Spectroscopy (TDS) experiment results within a 2 % accuracy.
Starting Page	1
Ending Page	9
Page Count	9
File Format	PDF
ISSN	03068919
Journal	Optical and Quantum Electronics
Volume Number	48
Issue Number	8
e-ISSN	1572817X
Language	English
Publisher	Springer US
Publisher Date	2016-07-18
Publisher Place	New York
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	FDR Doping density Carrier concentration THz InAs Optics, Lasers, Photonics, Optical Devices Electrical Engineering Characterization and Evaluation of Materials Computer Communication Networks
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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Non-destructive carrier concentration determination in InAs thin films for THz radiation generating devices using fast differential reflectance spectroscopy