NDLI: Photoluminescence of InAs quantum dots embedded in graded InGaAs barriers

Content Provider	Springer Nature Link
Author	Yin, Zongyou Tang, Xiaohong Zhang, Jixuan Zhao, Jinghua Deny, Sentosa Gong, Hao
Copyright Year	2008
Abstract	The effects of the top barrier and the dot density on photoluminescence (PL) of the InAs quantum dots (QDs) sandwiched by the graded In$_{x}$Ga$_{1−x}$As barriers grown by metal-organic vapor phase epitaxy (MOVPE) have been studied. Two emission peaks corresponding to the ground state and the 1st excited state transitions of the QD structures have been observed, which matches well to the theoretical calculation. The PL emission linewidth and intensity of the InAs QDs structure are improved by reducing the Indium/Gallium composition variation of the graded In$_{x}$Ga$_{1−x}$As top barrier layer of the structure. The QDs’ ground states filling excitation power depends on the crystal quality of the InGaAs barrier layer and the QD density. The extracted thermal activation energy for the QDs’ PL emission is sensitive to the QD size.
Starting Page	1947
Ending Page	1955
Page Count	9
File Format	PDF
ISSN	13880764
Journal	Journal of Nanoparticle Research
Volume Number	11
Issue Number	8
e-ISSN	1572896X
Language	English
Publisher	Springer Netherlands
Publisher Date	2008-12-17
Publisher Place	Dordrecht
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Photoluminescence Quantum dots Graded barrier Crystal quality State filling Nanocomposites Optics, Optoelectronics, Plasmonics and Optical Devices Physical Chemistry Inorganic Chemistry Characterization and Evaluation of Materials Nanotechnology
Content Type	Text
Resource Type	Article
Subject	Chemistry Nanoscience and Nanotechnology Atomic and Molecular Physics, and Optics Condensed Matter Physics Bioengineering Modeling and Simulation

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Studying of the photoluminescence characteristics of AgInS$_{2}$ quantum dots

Power density and temperature dependent multi-excited states in InAs/GaAs quantum dots

InAs quantum dots on different Ga(In)As surrounding material investigated by photoreflectance and photoluminescence spectroscopy: electronic energy levels and carrier’s dynamic

Temperature dependence of optical properties of InAs quantum dots grown on GaAs(113)A and (115)A substrates

Enhanced photocatalytic capability of SiO$_{2}$/CQD nanocomposites

Self-assembled SiGe quantum dots embedded in Ge matrix by Si ion implantation and subsequent annealing

Growth of InGaAs-capped InAs quantum dots characterized by Atomic Force Microscope and Scanning Electron Microscope

Fluorescent quantum dot hydrophilization with PAMAM dendrimer

Ferromagnetism in Cu-doped ZnSe semiconducting quantum dots

Photoluminescence of InAs quantum dots embedded in graded InGaAs barriers

Similar Documents

Studying of the photoluminescence characteristics of AgInS$_{2}$ quantum dots

Power density and temperature dependent multi-excited states in InAs/GaAs quantum dots

InAs quantum dots on different Ga(In)As surrounding material investigated by photoreflectance and photoluminescence spectroscopy: electronic energy levels and carrier’s dynamic

Temperature dependence of optical properties of InAs quantum dots grown on GaAs(113)A and (115)A substrates

Enhanced photocatalytic capability of SiO$_{2}$/CQD nanocomposites

Self-assembled SiGe quantum dots embedded in Ge matrix by Si ion implantation and subsequent annealing

Growth of InGaAs-capped InAs quantum dots characterized by Atomic Force Microscope and Scanning Electron Microscope

Fluorescent quantum dot hydrophilization with PAMAM dendrimer

Ferromagnetism in Cu-doped ZnSe semiconducting quantum dots

Photoluminescence of InAs quantum dots embedded in graded InGaAs barriers