NDLI: Photoconductive UV Detectors Based on ZnO Films Prepared by Sol-Gel Method

Content Provider	Springer Nature Link
Author	Xu, Ziqiang Deng, Hong Xie, Juan Li, Yan Li, Yanrong Zu, Xiaotao Xue, Shuwen
Copyright Year	2005
Abstract	Highly c-axis oriented ZnO thin films were deposited on single crystal Si (111) substrates by sol-gel method. The photoconductive UV detectors based on ZnO thin films, being a metal-semiconductor-metal (MSM) structure with interdigital (IDT) configuration, were fabricated by using Au as contact metal. The characteristics of dark and photocurrent of the UV detector, the UV photoresponse of the detector were investigated. The linear current-voltage (I-V) characteristics under both forward and reverse bias exhibit ohmic metal-semiconductor contacts. Under illumination using monochromatic light with a wavelength of 365 nm, photo-generated current arrived at 44.89 μ A at a bias of 6 V. The detector exhibits an evident wide-range spectral responsivity and shows a trend similar to that in photoluminescence (PL) spectrum. PL spectrum of detector exhibits two peaks, one is the near band edge emission, and another is the deep-level emission in the visible region.
Starting Page	223
Ending Page	226
Page Count	4
File Format	PDF
ISSN	09280707
Journal	Journal of Sol-Gel Science and Technology
Volume Number	36
Issue Number	2
e-ISSN	15734846
Language	English
Publisher	Kluwer Academic Publishers
Publisher Date	2005-01-01
Publisher Place	Boston
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	sol-gel ZnO photoconductive UV detector ohmic contact photoresponsivity Inorganic Chemistry Optical and Electronic Materials Ceramics, Glass, Composites, Natural Methods
Content Type	Text
Resource Type	Article
Subject	Ceramics and Composites Chemistry Materials Chemistry Biomaterials Condensed Matter Physics Electronic, Optical and Magnetic Materials

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