NDLI: The Electronic Structures and Magnetism in Al Doped 4H-SiC: The First-Principles Calculation

Content Provider	Springer Nature Link
Author	Lin, Xue ling Pan, Feng chun
Copyright Year	2013
Abstract	In the field of a diluted magnetic semiconductor, a nontransition metal doped semiconductor or oxide is a way to avoid the ferromagnetic clusters of secondary phase. Since there is no d electron in such system, the origin of magnetism is a surprise. In this article, first-principles calculations were used to investigate the origin of magnetism in Al doped 4H-SiC. It is found that a hole was introduced into the SiC:Al system, which is located on one C atom adjacent to the Si vacancy. A neutral Si vacancy with a substituting Al lead to the formation of a net moment less than 1.0μ $_{B}$, while the Al itself has no contribution to the magnetic moment, but plays a key role to form them. The coupling between such local moments is paramagnetic.
Starting Page	1513
Ending Page	1516
Page Count	4
File Format	PDF
ISSN	15571939
Journal	Journal of Superconductivity and Novel Magnetism
Volume Number	27
Issue Number	6
e-ISSN	15571947
Language	English
Publisher	Springer US
Publisher Date	2013-12-15
Publisher Place	New York
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	4H-SiC Magnetism First-principles calculations Strongly Correlated Systems, Superconductivity Magnetism, Magnetic Materials Condensed Matter Physics Characterization and Evaluation of Materials
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Condensed Matter Physics

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The Electronic Structures and Magnetism in Al Doped 4H-SiC: The First-Principles Calculation