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| Content Provider | Springer Nature Link |
|---|---|
| Author | González García, A. López Pérez, W. Barragán Yani, D. González Hernández, R. |
| Copyright Year | 2015 |
| Abstract | GGA and GGA+U formalisms have been implemented to comparatively study the electronic and magnetic properties of the Ni-doped AlN wurtzite semiconductor within density functional theory. Electronic structure calculations have been performed for ferromagnetic and antiferromagnetic states of Ni$_{ x }$Al$_{1−x }$N (x = 0.056 and 0.0625) by GGA and GGA+U schemes. It has been found that the GGA+U method increases the repulsion of the impurity bands in the gap of semiconductors. The magnetic moment of the atom impurity in Ni$_{ x }$Al$_{1−x }$N (x = 0.056 and 0.0625) is higher than those of the anions bonded to it for both GGA and GGA+U. Ni (N) contributions to the magnetic moment of Ni$_{ x }$Al$_{1−x }$N (x = 0.056 and 0.0625) decrease (increase) in NiN$_{4}$ tetrahedron when using GGA+U. A magnetic moment per Ni atom of about 2.10 μB is predicted in Ni$_{ x }$Al$_{1−x }$N for x = 0.056 with GGA approach for the most stable system. However, it was found that the ground state nature for Ni$_{ x }$Al$_{1−x }$N (x = 0.056 and 0.625) changes from ferromagnetic to antiferromagnetic with the GGA+U approach for the Ni-Ni closest configuration. On the contrary, for the Ni-Ni farthest configuration both GGA and GGA+U formalisms predict a ferromagnetic ground state for Ni$_{ x }$Al$_{1−x }$N (x = 0.056 and 0.0625). For intermediate Ni-Ni distances, both GGA and GGA+U schemes present almost the same energy differences and the same ferromagnetic ground state. The ferromagnetic ground state originates from the strong hybridization between Ni-d and N-p states. Additionally, it was found that the GGA+U formalism increases the magnetic moment per Ni atom for all Ni$_{ x }$Al$_{1−x }$N (x = 0.056) ferromagnetic states. |
| Starting Page | 3185 |
| Ending Page | 3192 |
| Page Count | 8 |
| File Format | |
| ISSN | 15571939 |
| Journal | Journal of Superconductivity and Novel Magnetism |
| Volume Number | 28 |
| Issue Number | 11 |
| e-ISSN | 15571947 |
| Language | English |
| Publisher | Springer US |
| Publisher Date | 2015-08-07 |
| Publisher Place | New York |
| Access Restriction | One Nation One Subscription (ONOS) |
| Subject Keyword | Diluted magnetic semiconductor Density-functional calculations AlN Transition metals Strongly Correlated Systems, Superconductivity Magnetism, Magnetic Materials Condensed Matter Physics Characterization and Evaluation of Materials |
| Content Type | Text |
| Resource Type | Article |
| Subject | Electronic, Optical and Magnetic Materials Condensed Matter Physics |
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