NDLI: Towards All Electrical Spin Injection and Detection in GaAs in a Lateral Geometry

Content Provider	Springer Nature Link
Author	Filip, A. T. Schoonus, J. J. H. M. Swagten, H. J. M. Koopmans, B. Jonge, W. J. M. Karouta, F. Geluk, E. J. Roy, W. Boeck, J.
Copyright Year	2005
Abstract	Herein we discuss our approach to realizing all electrical spin injection and detection in GaAs. We propose a lateral geometry, with two ferromagnetic electrodes crossing an n-doped GaAs channel. AlO$_{ x }$ tunnel barriers are to be used in order to overcome the impedance mismatch and different widths of the two electrodes ensure different coercive fields. We present a detailed theoretical analysis of the expected magnetoresistance. Differences in behavior between lateral and vertical devices, the influence of the applied bias (electric field), and opportunities offered by different measurement geometries were explored. The MBE grown wafer consisted of 100 nm Al$_{0.3}$Ga$_{0.7}$As, acting as confinement layer, 100 nm n-doped (4 × l0$^{17}$ cm$^{−3}$) GaAs, 3 nm n$^{++}$ GaAs (10$^{21}$ cm$^{−3}$), to suppress Schottky barrier formation, and 1.5 nm Al. The Al was oxidized naturally in order to obtain tunnel barriers. By making use of in-situ shadow masks, a 0.1 mm wide channel is defined by covering the rest of the sample by insulating SiO$_{2}$, followed by deposition of Ta bonding pads. Finally, 500 and 1000 nm wide CoFe electrodes crossing the GaAs channel are obtained by e-beam lithography and sputtering. We show that the I–V characteristics of the CoFe/AlO$_{ x }$/GaAs interface are consistent with tunneling as the main injection mechanism. However, the resistance-area (5 × 10$^{9}$ Ω μm$^{2}$) of our barriers is too high compared to the GaAs conductance (50 Ω square resistance) leading to a strong suppression of magnetoresistance. Further experiments are in progress toward optimizing barrier and channel impedance matching.
Starting Page	379
Ending Page	384
Page Count	6
File Format	PDF
ISSN	08961107
Journal	Journal of Superconductivity and Novel Magnetism
Volume Number	18
Issue Number	3
e-ISSN	15729605
Language	English
Publisher	Springer US
Publisher Date	2005-08-13
Publisher Place	Boston
Access Restriction	Subscribed
Subject Keyword	Characterization and Evaluation of Materials Condensed Matter Magnetism, Magnetic Materials Superconductivity, Superfluidity, Quantum Fluids
Content Type	Text
Resource Type	Article
Subject	3100/3101 Condensed Matter Physics Electronic, Optical and Magnetic Materials

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