NDLI: A Comparison of the Effects of Sm and Pb Doping in Bi$_{4}$O$_{4}$S$

Content Provider	Springer Nature Link
Author	Yao, Xiong Shao, Jifeng Liu, Zhongheng Zhang, Lei Tan, Shun Zhang, Changjin Zhang, Yuheng
Copyright Year	2014
Abstract	The effects of isovalent Sm doping and bivalent Pb doping at the Bi site on the superconductivity of Bi$_{4}$O$_{4}$S$_{3}$ superconductor are studied and compared. It is found that the bivalent Pb doping results in much faster decrease of superconducting transition temperature and upper critical field, compared with the isovalent Sm doping. Hall effect measurements suggest that bivalent Pb doping gives rise to rapid decrease in electron-like charge carrier concentration. Our results indicate that the bivalent Pb ions not only act as the impurity scatterers but also introduce hole-type charge carriers, which is harmful to the superconductivity in Bi$_{4}$O$_{4}$S$_{3}$ system.
Starting Page	2555
Ending Page	2562
Page Count	8
File Format	PDF
ISSN	15571939
Journal	Journal of Superconductivity and Novel Magnetism
Volume Number	27
Issue Number	11
e-ISSN	15571947
Language	English
Publisher	Springer US
Publisher Date	2014-07-20
Publisher Place	New York
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Doping Magnetization and resistivity Hall effect Strongly Correlated Systems, Superconductivity Magnetism, Magnetic Materials Condensed Matter Physics Characterization and Evaluation of Materials
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Condensed Matter Physics

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A Comparison of the Effects of Sm and Pb Doping in Bi$_{4}$O$_{4}$S$_{3}$ Superconductor