NDLI: Annealing Effect of Mn thin Films on GaAs

Content Provider	Springer Nature Link
Author	Chanda, Anupama Lenka, H. P. Jacob, Chacko
Copyright Year	2008
Abstract	Thin Mn films were deposited on GaAs(100) surfaces at room temperature by a thermal evaporation system followed by annealing at 500 °C for times ranging from 2 to 8 h in nitrogen atmosphere. X-ray diffraction shows that for samples annealed at 500 °C, the interfacial reaction results in the formation of different phases such as Mn$_{2}$As, MnAs and Mn$_{3}$Ga. Rutherford Backscattering Spectrometry indicates a diffused layer of Mn–Ga–As system along with some minor oxygen content. Magnetization study done at 10 K shows M–H curve comprising a ferromagnetic and antiferromagnetic part and M–T measurement done from 10 to 300 K shows a transition around 45 K which may be related to the presence of GaMnAs alloy along with the presence of the above binary phases.
Starting Page	401
Ending Page	407
Page Count	7
File Format	PDF
ISSN	15571939
Journal	Journal of Superconductivity and Novel Magnetism
Volume Number	22
Issue Number	4
e-ISSN	15571947
Language	English
Publisher	Springer US
Publisher Date	2008-12-20
Publisher Place	Boston
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Thin films Rutherford Backscattering X-ray diffraction Hysteresis Zero field cooled and field cooled Characterization and Evaluation of Materials Magnetism, Magnetic Materials Superconductivity, Superfluidity, Quantum Fluids Condensed Matter
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Condensed Matter Physics

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