NDLI: The Helium Field Effect Transistor (I): Storing Surface State Electrons on Helium Films

Content Provider	Springer Nature Link
Author	Ashari, M. Rees, D. G. Ko, K. Scheer, E. Leiderer, P.
Copyright Year	2012
Abstract	We present investigations of surface state electrons on liquid helium films in confined geometry, using a suitable substrate structure microfabricated on a silicon wafer, similar to a Field Effect Transistor (FET). The sample has a source and drain region, separated by a gate structure, which consists of two gold electrodes with a narrow gap (channel) through which the transport of the surface state electrons takes place. The sample is illuminated to provide a sufficient number of free carriers in the silicon substrate, such that a well-defined potential distribution is achieved. The eventual goal of these experiments is to study the electron transport through a narrow channel in the various states of the phase diagram of the 2D electron system. In the present work we focus on storing the electrons in the source area of the FET, and investigate the spatial distribution of these electrons. It is shown that under the influence of a potential gradient in the silicon substrate the electrons accumulate in front of the potential barrier of the gate. The electron distribution, governed by Coulomb repulsion and by the substrate potential, is determined experimentally. The result is found to be in good agreement with a parallel-plate capacitor model of the system, developed with the aid of a finite element calculation of the surface potential profile of the device.
Starting Page	15
Ending Page	25
Page Count	11
File Format	PDF
ISSN	00222291
Journal	Journal of Low Temperature Physics
Volume Number	167
Issue Number	1-2
e-ISSN	15737357
Language	English
Publisher	Springer US
Publisher Date	2012-02-29
Publisher Place	Boston
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Helium field effect transistor Surface electron Helium film Electron storage Condensed Matter Physics Magnetism, Magnetic Materials Characterization and Evaluation of Materials
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Condensed Matter Physics Materials Science

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The Helium Field Effect Transistor (II): Gated Transport of Surface-State Electrons Through Micro-constrictions

Stability of Surface State Electrons on Helium Films

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The Helium Field Effect Transistor (I): Storing Surface State Electrons on Helium Films

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