NDLI: Structural Analysis and Infrared Emission from Ti$^{+3}$ Doped AlN Deposited on Si(100) and Si(111) Substrates and Optical Fibers

Content Provider	Springer Nature Link
Author	Maqbool, Muhammad Main, Kyle Ahmad, Iftikhar
Copyright Year	2015
Abstract	Thin films of AlN doped with Titanium are deposited on Si(100) and Si(111) substrates and optical fibers at liquid nitrogen temperature by rf-magnetron sputtering. Thickness of the films is 400 nm on both silicon substrates and optical fibers. X-ray diffraction studies show that films deposited on both Si(100) and Si(111) substrate are amorphous, and those deposited on optical fibers are crystalline under the same conditions. The results indicate that low temperature is not the only requirement to grow amorphous films but the size and shape of substrate also affect the structure and morphology of a thin film material. X-Ray Fluorescence and Photoluminescence of the as-deposited AlN:Ti films report an emission peak at 781 nm as a result of $^{4}$T$_{2}$ $$\rightarrow $$ $^{4}$A$_{2}$ transition. A relatively less intense emission is also observed at 785 nm. The fluorescence emission from Ti$^{+3}$ is proved to be isotropic.
Starting Page	365
Ending Page	374
Page Count	10
File Format	PDF
ISSN	00222291
Journal	Journal of Low Temperature Physics
Volume Number	179
Issue Number	5-6
e-ISSN	15737357
Language	English
Publisher	Springer US
Publisher Date	2015-04-18
Publisher Place	New York
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Thin films Amorphous materials Luminescence X-ray diffraction Microstructure Condensed Matter Physics Characterization and Evaluation of Materials Magnetism, Magnetic Materials
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Condensed Matter Physics Materials Science

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