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  1. Journal of Materials Science: Materials in Electronics
  2. Journal of Materials Science: Materials in Electronics : Volume 16
  3. Journal of Materials Science: Materials in Electronics : Volume 16, Issue 2, February 2005
  4. Patterned porous silicon formed with photolithography
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Journal of Materials Science: Materials in Electronics : Volume 28
Journal of Materials Science: Materials in Electronics : Volume 27
Journal of Materials Science: Materials in Electronics : Volume 26
Journal of Materials Science: Materials in Electronics : Volume 25
Journal of Materials Science: Materials in Electronics : Volume 24
Journal of Materials Science: Materials in Electronics : Volume 23
Journal of Materials Science: Materials in Electronics : Volume 22
Journal of Materials Science: Materials in Electronics : Volume 21
Journal of Materials Science: Materials in Electronics : Volume 20
Journal of Materials Science: Materials in Electronics : Volume 19
Journal of Materials Science: Materials in Electronics : Volume 18
Journal of Materials Science: Materials in Electronics : Volume 17
Journal of Materials Science: Materials in Electronics : Volume 16
Journal of Materials Science: Materials in Electronics : Volume 16, Issue 11-12, November 2005
Journal of Materials Science: Materials in Electronics : Volume 16, Issue 10, October 2005
Journal of Materials Science: Materials in Electronics : Volume 16, Issue 9, September 2005
Journal of Materials Science: Materials in Electronics : Volume 16, Issue 8, August 2005
Journal of Materials Science: Materials in Electronics : Volume 16, Issue 7, July 2005
Journal of Materials Science: Materials in Electronics : Volume 16, Issue 6, June 2005
Journal of Materials Science: Materials in Electronics : Volume 16, Issue 5, May 2005
Journal of Materials Science: Materials in Electronics : Volume 16, Issue 4, April 2005
Journal of Materials Science: Materials in Electronics : Volume 16, Issue 3, March 2005
Journal of Materials Science: Materials in Electronics : Volume 16, Issue 2, February 2005
The electrical behavior of laminated conductive polymer composite at low temperatures
Effect of N$_{2}$ gas annealing and SiO$_{2}$ barrier on the optical transmittance and electrical resistivity of a transparent Sb-doped SnO$_{2}$ conducting film
Comparison of theoretical predictions and experimental values of the dielectric constant of epoxy/BaTiO$_{3}$ composite embedded capacitor films
Dilution effects on X-ray photoelectron spectra of La$_{0.8}$Sr$_{0.2}$MnO$_{3}$ with SiO$_{2}$
UV-cured hybrid inorganic-organic polymer electrolyte based on organically modified polysiloxane
The structural properties of Ge$_{x}$ Sb$_{40−x}$ Se$_{60}$ system
Annealing effects on the structural and optical properties of gallium oxide nanowires
Properties of LT-AlGaN films and HT-GaN films using LT-AlGaN buffer layers grown on (0001) sapphire substrates
Electrodeposition of nickel selenide thin films in the presence of triethanolamine as a complexing agent
Patterned porous silicon formed with photolithography
Journal of Materials Science: Materials in Electronics : Volume 16, Issue 1, January 2005
Journal of Materials Science: Materials in Electronics : Volume 15
Journal of Materials Science: Materials in Electronics : Volume 14
Journal of Materials Science: Materials in Electronics : Volume 13
Journal of Materials Science: Materials in Electronics : Volume 12
Journal of Materials Science: Materials in Electronics : Volume 11
Journal of Materials Science: Materials in Electronics : Volume 10
Journal of Materials Science: Materials in Electronics : Volume 9
Journal of Materials Science: Materials in Electronics : Volume 8

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Patterned porous silicon formed with photolithography

Content Provider Springer Nature Link
Author Ohmukai, M. Okada, K. Tsutsumi, Y.
Copyright Year 2005
Abstract Porous silicon is a fascinating light-emitting material among silicon-related materials. We have challenged to form a patterned porous silicon layer for the purpose of the micro optical devices with the help of photolithography. Photoresist has been used as a mask that prevented the formation of porous silicon. We achieved square patterned porous silicon with a precision of 30 μm. We also found a problem that the formation of porous silicon also proceeded under the mask partly.
Starting Page 119
Ending Page 121
Page Count 3
File Format PDF
ISSN 09574522
Journal Journal of Materials Science: Materials in Electronics
Volume Number 16
Issue Number 2
e-ISSN 1573482X
Language English
Publisher Kluwer Academic Publishers
Publisher Date 2005-01-01
Publisher Place Boston
Access Restriction One Nation One Subscription (ONOS)
Subject Keyword Optical and Electronic Materials Characterization and Evaluation Materials
Content Type Text
Resource Type Article
Subject Atomic and Molecular Physics, and Optics Biomaterials Biophysics Condensed Matter Physics Electronic, Optical and Magnetic Materials Bioengineering Electrical and Electronic Engineering Biomedical Engineering
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