NDLI: Influence of potential fluctuations on photoconductivity in a-Si : H

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Influence of potential fluctuations on photoconductivity in a-Si : H

Content Provider	Springer Nature Link
Author	Shimakawa, K.
Copyright Year	2003
Abstract	The effects of long-range potential fluctuations (LRPF) on the d.c. and a.c. photoconductivities of undoped hydrogenated amorphous silicon (a-Si : H) have been discussed in the temperature region 20–300 K. It is found that the a.c. photoconductivity in the entire temperature range is dominated by dielectric relaxation, and not by any electronic hopping motion. A reasonable fit of the experimental data to a model calculation based on LRPF is obtained, and the extent of the potential fluctuations is deduced to be ∼0.06 eV in energy and ∼10 nm on a length scale.
Starting Page	685
Ending Page	688
Page Count	4
File Format	PDF
ISSN	09574522
Journal	Journal of Materials Science: Materials in Electronics
Volume Number	14
Issue Number	10-12
e-ISSN	1573482X
Language	English
Publisher	Kluwer Academic Publishers
Publisher Date	2003-01-01
Publisher Place	Dordrecht
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Optical and Electronic Materials Characterization and Evaluation Materials
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Biomaterials Biophysics Condensed Matter Physics Electronic, Optical and Magnetic Materials Bioengineering Electrical and Electronic Engineering Biomedical Engineering

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