NDLI: Rectifying properties of poly(N-methylaniline)

Content Provider	Springer Nature Link
Author	Syed Abthagir, P. Saraswathi, R.
Copyright Year	2004
Abstract	The electrical properties of various metal (Al/In/Sb/Sn)/poly(N-methylaniline)/gold Schottky diodes are described. The temperature-dependent dark current (J)–voltage (V ) characteristics indicate that the junctions formed with Al/In possess better rectifying properties with Schottky emission. In the case of junctions formed with Sb/Sn, Poole–Frenkel emission appears to be the dominant mechanism. The junction parameters of ideality factor, reverse saturation current, and barrier potential have been evaluated and compared with the reported values for Schottky barriers based on polyaniline and a few of its substituted derivatives. The capacitance (C)–voltage (V ) data obtained at different frequencies have been used to evaluate the carrier concentration, mobility, depletion width, contact potential, and work function of the polymer.
Starting Page	81
Ending Page	86
Page Count	6
File Format	PDF
ISSN	09574522
Journal	Journal of Materials Science: Materials in Electronics
Volume Number	15
Issue Number	2
e-ISSN	1573482X
Language	English
Publisher	Kluwer Academic Publishers
Publisher Date	2004-01-01
Publisher Place	Boston
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Optical and Electronic Materials Characterization and Evaluation Materials
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Biomaterials Biophysics Condensed Matter Physics Electronic, Optical and Magnetic Materials Bioengineering Electrical and Electronic Engineering Biomedical Engineering

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