NDLI: Structural investigations of RTA boron-doped thin a-Si layers

Content Provider	Springer Nature Link
Author	Popova, L. Peneva, St. Aleksandrova, P. Beshkov, G.
Copyright Year	2005
Abstract	The structural changes in as- sputtered thin a-Si layer, and after boron doping with rapid thermal annealing are investigated by transmission electron microscopy. Stable hexagonal amorphous/crystalline series of SiO$_{2}$ structures, as signed as SiO$_{2}$ (SnO$_{2}$-V), not revealed in high temperature SiO$_{2}$ layers, are observed in all films investigated. Different types of crystalline and high ordered SiO$_{2}$ structures are obtained in the BSG film, used for doping. Boron penetration in the a-Si layer starts the crystallization at B/Si ratios lower than 10$^{−3}$. RTA process leads to inhomogeneous disordered polycrystalline silicon layer, with large areas of poly-and monocrystalline silicon, coexisting with various crystalline SiO$_{2}$ structures. Faster crystallization and larger monocrystalline silicon regions are observed at higher temperatures and longest durations of the annealing process.
Starting Page	489
Ending Page	493
Page Count	5
File Format	PDF
ISSN	09574522
Journal	Journal of Materials Science: Materials in Electronics
Volume Number	16
Issue Number	8
e-ISSN	1573482X
Language	English
Publisher	Kluwer Academic Publishers
Publisher Date	2005-01-01
Publisher Place	Boston
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Characterization and Evaluation Materials Optical and Electronic Materials
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Biomaterials Biophysics Condensed Matter Physics Electronic, Optical and Magnetic Materials Bioengineering Electrical and Electronic Engineering Biomedical Engineering

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Characterization of polystyrene and doped polymethylmethacrylate thin layers

Evaluation of the infrared absorption in nm-thick heavily boron-doped Si$_{1-x}$Ge$_{x}$ layers on silicon

Structural, optical and magnetic investigations on Fe-doped ZnS nanoparticles

Transfer of thin Si layers by cold and thermal ion cutting

Characterization of Sn-doped BST thin films on LaNiO$_{3}$–coated Si substrate

Structural, optical and electrical investigations on Nb doped TiO$_{2}$ radio-frequency sputtered thin films from a powder target

Optical and structural investigations on rare earth-doped thin films of phosphate glasses prepared by pulsed laser deposition

Structural, electrical and optical properties of Si doped ZnO films grown by atomic layer deposition

Dislocation behavior in highly impurity-doped Si

Structural investigations of RTA boron-doped thin a-Si layers

Similar Documents

Characterization of polystyrene and doped polymethylmethacrylate thin layers

Evaluation of the infrared absorption in nm-thick heavily boron-doped Si$_{1-x}$Ge$_{x}$ layers on silicon

Structural, optical and magnetic investigations on Fe-doped ZnS nanoparticles

Transfer of thin Si layers by cold and thermal ion cutting

Characterization of Sn-doped BST thin films on LaNiO$_{3}$–coated Si substrate

Structural, optical and electrical investigations on Nb doped TiO$_{2}$ radio-frequency sputtered thin films from a powder target

Optical and structural investigations on rare earth-doped thin films of phosphate glasses prepared by pulsed laser deposition

Structural, electrical and optical properties of Si doped ZnO films grown by atomic layer deposition

Dislocation behavior in highly impurity-doped Si

Structural investigations of RTA boron-doped thin a-Si layers