NDLI: SEM and specific contact resistance analysis of screen-printed Ag contacts formed by fire-through process on the shallow emitters of silicon solar cell

Content Provider	Springer Nature Link
Author	Vid, P. N.
Copyright Year	2008
Abstract	The SEM and specific contact resistance measurements of the Ag metal contact formed by applying a fire-through process on the shallow emitter region of the silicon solar cell have been investigated. The metal contact consists of screen-printed Ag paste patterned on the silicon nitride (Si$_{3}$N$_{4}$) deposited over the n$^{+}$-Si emitter region of the solar cell. The sintering step consists of a rapid firing step at 800 °C or above in air ambient. This is followed by an annealing step at 450 °C in nitrogen ambient. It enables to drive the Ag metal paste onto the Si$_{3}$N$_{4}$ layer and facilitates the formation of an Ag metal/p-Si contact structure. It serves as the top metallization for the screen-printed silicon solar cell. The SEM measurement shows that sintering of the Ag metal paste at 800 °C or above causes the Ag metal to firmly coalesce with the underlying n$^{+}$-Si surface. A thin layer of conductive glassy layer is also presents at the interface of the Ag metal and n$^{+}$-Si surface. The electrical quality of the contact structure was characterized by measuring the specific contact resistance, ρ $_{ c }$ (in Ω-cm$^{2}$) using the iteration technique based on the power loss calculation for the solar cell. It shows that best value of ρ $_{ c }$ = 2.53 × 10$^{−5}$ Ω-cm$^{2}$ is estimated for the Ag metal contact sintered at temperature above 800 °C. This value of ρ $_{ c }$ is two orders of magnitude lower than the typical value of ρ $_{ c }$ = 3 × 10$^{−3}$ Ω-cm$^{2}$ reported previously for the Ag contacts of the solar cell. Such low value of ρ $_{ c }$ for the Ag metal contacts indicates that fire-through process results in excellent ohmic properties. The plot of the ρ $_{ c }$ versus impurity doping level (N $_{ s }$) shows that measured value of the ρ $_{ c }$ follows a linear relationship with the N $_{ s }$ as predicted by the theory for the heavily doped semiconductor surface. Hence, carrier injection across the Schottky barrier height is quite appropriate to explain the observed ohmic properties of the Ag metal contacts on the n$^{+}$-Si surface of the silicon solar cell.
Starting Page	1026
Ending Page	1032
Page Count	7
File Format	PDF
ISSN	09574522
Journal	Journal of Materials Science: Materials in Electronics
Volume Number	20
Issue Number	10
e-ISSN	1573482X
Language	English
Publisher	Springer US
Publisher Date	2008-12-10
Publisher Place	Boston
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Characterization and Evaluation of Materials Optical and Electronic Materials
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Biomaterials Biophysics Condensed Matter Physics Electronic, Optical and Magnetic Materials Bioengineering Electrical and Electronic Engineering Biomedical Engineering

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