NDLI: Electrical studies on sputtered CuCl thin films

Content Provider	Springer Nature Link
Author	Natarajan, Gomathi Rajendra Kumar, R. T. Daniels, S. Cameron, D. C. McNally, P. J.
Copyright Year	2007
Abstract	CuCl is a wide-direct band gap semiconductor, lattice matched to Si and it possesses excellent ultra violet (UV) emission properties. It is thus a promising candidate for the next generation Si based UV optoelectronics. CuCl films were deposited using RF magnetron sputtering technique. X-ray diffraction analysis reveals that the grains are strongly <111> oriented. Triangular crystallites of CuCl were observed in the AFM surface topograph. Au–CuCl–Si–Au structures were fabricated and field dependent electrical studies were carried out in the electric field range of 1.25 × 10$^{6 }$to 2.5 × 10$^{7 }$V/m. I–V characteristics show that ohmic conduction prevails in low electric fields up to 2.5 × 10$^{6 }$V/m. In the higher field range, from 2.5 × 10$^{6 }$to 2.5 × 10$^{7 }$V/m, the conduction mechanism was Schottky emission controlled. There was no trap related charge transport observed at higher electric fields. Preliminary electrical studies are reported in this article.
Starting Page	103
Ending Page	106
Page Count	4
File Format	PDF
ISSN	09574522
Journal	Journal of Materials Science: Materials in Electronics
Volume Number	19
Issue Number	2
e-ISSN	1573482X
Language	English
Publisher	Springer US
Publisher Date	2007-06-05
Publisher Place	Boston
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Characterization and Evaluation of Materials Optical and Electronic Materials
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Biomaterials Biophysics Condensed Matter Physics Electronic, Optical and Magnetic Materials Bioengineering Electrical and Electronic Engineering Biomedical Engineering

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