NDLI: Structural and electrical properties of cerium dioxide films grown by RF magnetron sputtering

Content Provider	Springer Nature Link
Author	TSAI, WEN CHOU TSENG, TSEUNG YUEN
Copyright Year	1997
Abstract	A systematic study was performed on the structural and electrical properties of cerium dioxide thin films grown on Si substrate with various deposition temperatures by RF magnetron sputtering. The films grown at 200°C are partly amorphous whereas those grown above 250°C are polycrystalline. An amorphous layer of SiO$_{2}$ forms at the interface between the cerium dioxide film and the Si substrate. Cerium dioxide film grown at higher temperatures up to 500°C sustains more leakage current on the basis of current-voltage measurements. The electrical conduction of the films is well fitted by a power-law relation, which is explained as space-charge-limited current conduction with exponential distributed traps in the band gap. The variations of dielectric constant, flatband voltage, fixed oxide charge and interface-trapped charge with deposition temperature were studied by making capacitance-voltage measurements on an Al/CeO$_{2}$/Si structure. The variations of electrical properties with temperature are strongly correlated with the formation of an amorphous SiO$_{2}$ layer.
Starting Page	313
Ending Page	320
Page Count	8
File Format	PDF
ISSN	09574522
Journal	Journal of Materials Science: Materials in Electronics
Volume Number	8
Issue Number	5
e-ISSN	1573482X
Language	English
Publisher	Kluwer Academic Publishers
Publisher Date	1997-01-01
Publisher Place	Dordrecht
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Characterization and Evaluation Materials Optical and Electronic Materials
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Biomaterials Biophysics Condensed Matter Physics Electronic, Optical and Magnetic Materials Bioengineering Electrical and Electronic Engineering Biomedical Engineering

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