NDLI: Barrier/bonding layers on bismuth telluride (Bi$_{2}$Te$_{3}$) for high temperature thermoelectric modules

Content Provider	Springer Nature Link
Author	Lin, Wen P. Wesolowski, Daniel E. Lee, Chin C.
Copyright Year	2011
Abstract	In this research, a fundamental study is conducted to identify the materials and develop the processes for producing barrier/bonding composite on Bi$_{2}$Te$_{3}$ for high temperature thermoelectric applications. The composite must meet four basic requirements: (a) prevent inter-diffusion between the electrode material, for our design, silver(Ag) and Bi$_{2}$Te$_{3}$, (b) bond well to Bi$_{2}$Te$_{3}$, (c) bond well to Ag electrode, and (d) do not themselves diffuse into Bi$_{2}$Te$_{3}$. The composites investigated include palladium (Pd), nickel/gold (Ni/Au), Ag, and titanium/gold (Ti/Au). After annealing at 250 °C for 200 h, only the Ti/Au design meets all four requirements. The thickness of Ti and Au, respectively, is only 100 nm. Other than meeting these four requirements, the Ti/Au layers exhibit excellent step coverage on the rough Bi$_{2}$Te$_{3}$ surface even after the annealing process.
Starting Page	1313
Ending Page	1320
Page Count	8
File Format	PDF
ISSN	09574522
Journal	Journal of Materials Science: Materials in Electronics
Volume Number	22
Issue Number	9
e-ISSN	1573482X
Language	English
Publisher	Springer US
Publisher Date	2011-01-26
Publisher Place	Boston
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Characterization and Evaluation of Materials Optical and Electronic Materials
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Biomaterials Biophysics Condensed Matter Physics Electronic, Optical and Magnetic Materials Bioengineering Electrical and Electronic Engineering Biomedical Engineering

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