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  1. Journal of Materials Science: Materials in Electronics
  2. Journal of Materials Science: Materials in Electronics : Volume 20
  3. Journal of Materials Science: Materials in Electronics : Volume 20, Issue 1, January 2009
  4. Sintering mechanisms in aluminum nitride with Y or Ca-containing additive
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Journal of Materials Science: Materials in Electronics : Volume 28
Journal of Materials Science: Materials in Electronics : Volume 27
Journal of Materials Science: Materials in Electronics : Volume 26
Journal of Materials Science: Materials in Electronics : Volume 25
Journal of Materials Science: Materials in Electronics : Volume 24
Journal of Materials Science: Materials in Electronics : Volume 23
Journal of Materials Science: Materials in Electronics : Volume 22
Journal of Materials Science: Materials in Electronics : Volume 21
Journal of Materials Science: Materials in Electronics : Volume 20
Journal of Materials Science: Materials in Electronics : Volume 20, Issue 12, December 2009
Journal of Materials Science: Materials in Electronics : Volume 20, Issue 11, November 2009
Journal of Materials Science: Materials in Electronics : Volume 20, Issue 10, October 2009
Journal of Materials Science: Materials in Electronics : Volume 20, Issue 9, September 2009
Journal of Materials Science: Materials in Electronics : Volume 20, Issue 8, August 2009
Journal of Materials Science: Materials in Electronics : Volume 20, Issue 7, July 2009
Journal of Materials Science: Materials in Electronics : Volume 20, Issue 6, June 2009
Journal of Materials Science: Materials in Electronics : Volume 20, Issue 5, May 2009
Journal of Materials Science: Materials in Electronics : Volume 20, Issue 4, April 2009
Journal of Materials Science: Materials in Electronics : Volume 20, Issue 3, March 2009
Journal of Materials Science: Materials in Electronics : Volume 20, Issue 2, February 2009
Journal of Materials Science: Materials in Electronics : Volume 20, Issue 1, Supplement,January 2009
Journal of Materials Science: Materials in Electronics : Volume 20, Issue 1, January 2009
Sintering mechanisms in aluminum nitride with Y or Ca-containing additive
Thermally stable and low-resistance W/Ti/Au contacts to n-type GaN
Effect of β-irradiation on photoluminescence of MOCVD grown GaN
Failure behaviors of BGA solder joints under various loading conditions of high-speed shear test
Capacitance and resistance measurements of SnO$_{2}$ thick-films
An alternative process for electroless copper plating on polyester fabric
Microwave dielectric properties of 3Li$_{2}$O–Nb$_{2}$O$_{5}$–3TiO$_{2}$ ceramics with Li$_{2}$O–V$_{2}$O$_{5}$ additions
Studies of BaTiO$_{3}$ thin films on different bottom electrode
The influence of area/volume ratio on microstructure and non-Ohmic properties of SnO$_{2}$-based varistor ceramic blocks
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Structural, optical, magnetic and electrical properties of Zn$_{1−x }$Co$_{ x }$O thin films
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Journal of Materials Science: Materials in Electronics : Volume 19
Journal of Materials Science: Materials in Electronics : Volume 18
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Journal of Materials Science: Materials in Electronics : Volume 15
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Journal of Materials Science: Materials in Electronics : Volume 12
Journal of Materials Science: Materials in Electronics : Volume 11
Journal of Materials Science: Materials in Electronics : Volume 10
Journal of Materials Science: Materials in Electronics : Volume 9
Journal of Materials Science: Materials in Electronics : Volume 8

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Sintering mechanisms in aluminum nitride with Y or Ca-containing additive

Content Provider Springer Nature Link
Author Molisani, A. L. Yoshimura, H. N. Goldenstein, H.
Copyright Year 2008
Abstract AlN with 4 wt.% Y$_{2}$O$_{3}$ or CaO were prepared by sintering in dilatometer and conventional furnace up to 1850 °C. The aim of this work was to compare the sintering behavior and mechanisms related with the densification of AlN with Y or Ca-containing additives. The sample with Y$_{2}$O$_{3}$ approached 33% of total densification by solid-state sintering process preceding the liquid phase formation, which was near 1700 °C. After the formation of liquid an overheating of only 50 °C was needed for this sample to achieve full density. The sample with CaO formed liquid-phase near 1400 °C, but required a higher overheating (>300 °C) in order to achieve full density. The densification of the sample with CaO was retarded by: (i) high viscosity of the liquid-phase formed below 1600 °C; (ii) formation of large pores; and (iii) gas entrapped inside the pores.
Starting Page 1
Ending Page 8
Page Count 8
File Format PDF
ISSN 09574522
Journal Journal of Materials Science: Materials in Electronics
Volume Number 20
Issue Number 1
e-ISSN 1573482X
Language English
Publisher Springer US
Publisher Date 2008-05-21
Publisher Place Boston
Access Restriction One Nation One Subscription (ONOS)
Subject Keyword Characterization and Evaluation of Materials Optical and Electronic Materials
Content Type Text
Resource Type Article
Subject Atomic and Molecular Physics, and Optics Biomaterials Biophysics Condensed Matter Physics Electronic, Optical and Magnetic Materials Bioengineering Electrical and Electronic Engineering Biomedical Engineering
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