NDLI: Resistive switching memory of single BiMnO$_{3+δ}$ nanorods

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Resistive switching memory of single BiMnO$_{3+δ}$ nanorods

Content Provider	Springer Nature Link
Author	Yan, Yongming Sun, Bai Ma, De Jian
Copyright Year	2015
Abstract	In this work, BiMnO$_{3+δ}$ nanorods were prepared by an improved hydrothermal process. Further, we demonstrate the bipolar resistive switching memory behavior of single BiMnO$_{3+δ}$ nanorods. The physical model of conducting filament formation due to the diffusion of Ag ions along the BiMnO$_{3+δ}$ nanorods under electric field has been suggested to explain the bipolar resistive switching behavior. This study is useful for developing the nonvolatile memory technology in nanoscale.
Starting Page	512
Ending Page	516
Page Count	5
File Format	PDF
ISSN	09574522
Journal	Journal of Materials Science: Materials in Electronics
Volume Number	27
Issue Number	1
e-ISSN	1573482X
Language	English
Publisher	Springer US
Publisher Date	2015-10-15
Publisher Place	New York
Access Restriction	One Nation One Subscription (ONOS)
Subject Keyword	Optical and Electronic Materials Characterization and Evaluation of Materials
Content Type	Text
Resource Type	Article
Subject	Atomic and Molecular Physics, and Optics Biomaterials Biophysics Condensed Matter Physics Electronic, Optical and Magnetic Materials Bioengineering Electrical and Electronic Engineering Biomedical Engineering

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