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  1. Journal of Materials Science: Materials in Electronics
  2. Journal of Materials Science: Materials in Electronics : Volume 10
  3. Journal of Materials Science: Materials in Electronics : Volume 10, Issue 7, September 1999
  4. Ba4Nd2Ti4Ta6O30 dielectric ceramics modified by Bi substitution for Nd
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Journal of Materials Science: Materials in Electronics : Volume 28
Journal of Materials Science: Materials in Electronics : Volume 27
Journal of Materials Science: Materials in Electronics : Volume 26
Journal of Materials Science: Materials in Electronics : Volume 25
Journal of Materials Science: Materials in Electronics : Volume 24
Journal of Materials Science: Materials in Electronics : Volume 23
Journal of Materials Science: Materials in Electronics : Volume 22
Journal of Materials Science: Materials in Electronics : Volume 21
Journal of Materials Science: Materials in Electronics : Volume 20
Journal of Materials Science: Materials in Electronics : Volume 19
Journal of Materials Science: Materials in Electronics : Volume 18
Journal of Materials Science: Materials in Electronics : Volume 17
Journal of Materials Science: Materials in Electronics : Volume 16
Journal of Materials Science: Materials in Electronics : Volume 15
Journal of Materials Science: Materials in Electronics : Volume 14
Journal of Materials Science: Materials in Electronics : Volume 13
Journal of Materials Science: Materials in Electronics : Volume 12
Journal of Materials Science: Materials in Electronics : Volume 11
Journal of Materials Science: Materials in Electronics : Volume 10
Journal of Materials Science: Materials in Electronics : Volume 10, Issue 9, December 1999
Journal of Materials Science: Materials in Electronics : Volume 10, Issue 8, November 1999
Journal of Materials Science: Materials in Electronics : Volume 10, Issue 7, September 1999
Material properties and growth mechanism of CuInSe$_{2}$ prepared by H$_{2}$Se treatment of metallic alloys
New low loss microwave dielectric ceramics in the BaO-TiO$_{2}$-Nb$_{2}$O$_{5}$Ta$_{2}$O$_{5}$ system
Electrical transport as a function of temperature in urea and cobalt (III)-urea complex
Ba4Nd2Ti4Ta6O30 dielectric ceramics modified by Bi substitution for Nd
A robust low cost thick film system for the consumer market
Antireflective coating for ITO films deposited on glass substrate
Photoelectronic properties of (Cu, Fe, Al) incorporated CdS thin films
Photo and electroluminescence from terbium doped zinc sulfide films deposited by spray pyrolysis
FeSbO$_{4}$ semiconductor ceramics: a new material for sensing liquid-petroleum gas
The influence of materials properties on the design of MCM and microstrip structures
High-quality n-Si/i-p$^{+}$-i SiGe/n-Si structure grown by ultra high vacuum chemical molecular epitaxy
The fabrication of microrelief structures in evaporated Ag/a-Ge$_{30}$S$_{70}$ layers
Effect of microstructure on degradation of AlN films prepared by ion beam assisted deposition
Characterization of ITO/ZnPc/CHR/In p-n junction-photovoltaic device using J–V, C–V and photoaction measurements
Correlation between structural properties and gas sensing characteristics of SnO$_{2}$ based gas sensors
Characterization of lead zirconate titanate thin film deposition onto Pt/Ti/SiO$_{2/Si}$ substrates
Preparation and conductivity of dithiolene complex Langmuir–Blodgett films
Journal of Materials Science: Materials in Electronics : Volume 10, Issue 5-6, July 1999
Journal of Materials Science: Materials in Electronics : Volume 10, Issue 4, June 1999
Journal of Materials Science: Materials in Electronics : Volume 10, Issue 3, May 1999
Journal of Materials Science: Materials in Electronics : Volume 10, Issue 2, April 1999
Journal of Materials Science: Materials in Electronics : Volume 10, Issue 1, March 1999
Journal of Materials Science: Materials in Electronics : Volume 9
Journal of Materials Science: Materials in Electronics : Volume 8

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Ba4Nd2Ti4Ta6O30 dielectric ceramics modified by Bi substitution for Nd

Content Provider Springer Nature Link
Author Wang, J. Chen, X. M. Yang, J. S.
Copyright Year 1999
Abstract Modification of dielectric properties for Ba$_{4}$Nd$_{2}$Ti$_{4}$Ta$_{6}$O$_{30}$ ceramic was investigated through Bi partial substitution for Nd. The dielectric constant increased and the dielectric loss decreased with increasing concentration of Bi, and the dielectric constant reached 142, combined with a low dielectric loss of 10$^{−4}$ (at 1 MHz) for the composition Ba$_{4}$(Nd$_{0.975}$Bi$_{0.025}$)$_{2}$Ti$_{4}$Ta$_{6}$O$_{30}$. The temperature coefficient (τ$_{ɛ}$) can be slightly improved.
Starting Page 483
Ending Page 486
Page Count 4
File Format PDF
ISSN 09574522
Journal Journal of Materials Science: Materials in Electronics
Volume Number 10
Issue Number 7
e-ISSN 1573482X
Language English
Publisher Kluwer Academic Publishers
Publisher Date 1999-01-01
Publisher Place Boston
Access Restriction One Nation One Subscription (ONOS)
Subject Keyword Optical and Electronic Materials Characterization and Evaluation Materials
Content Type Text
Resource Type Article
Subject Atomic and Molecular Physics, and Optics Biomaterials Biophysics Condensed Matter Physics Electronic, Optical and Magnetic Materials Bioengineering Electrical and Electronic Engineering Biomedical Engineering
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