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  1. Journal of Materials Science: Materials in Electronics
  2. Journal of Materials Science: Materials in Electronics : Volume 12
  3. Journal of Materials Science: Materials in Electronics : Volume 12, Issue 12, December 2001
  4. Ellipsometry study of InN thin films prepared by magnetron sputtering
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Journal of Materials Science: Materials in Electronics : Volume 28
Journal of Materials Science: Materials in Electronics : Volume 27
Journal of Materials Science: Materials in Electronics : Volume 26
Journal of Materials Science: Materials in Electronics : Volume 25
Journal of Materials Science: Materials in Electronics : Volume 24
Journal of Materials Science: Materials in Electronics : Volume 23
Journal of Materials Science: Materials in Electronics : Volume 22
Journal of Materials Science: Materials in Electronics : Volume 21
Journal of Materials Science: Materials in Electronics : Volume 20
Journal of Materials Science: Materials in Electronics : Volume 19
Journal of Materials Science: Materials in Electronics : Volume 18
Journal of Materials Science: Materials in Electronics : Volume 17
Journal of Materials Science: Materials in Electronics : Volume 16
Journal of Materials Science: Materials in Electronics : Volume 15
Journal of Materials Science: Materials in Electronics : Volume 14
Journal of Materials Science: Materials in Electronics : Volume 13
Journal of Materials Science: Materials in Electronics : Volume 12
Journal of Materials Science: Materials in Electronics : Volume 12, Issue 12, December 2001
III-Nitride semiconductor growth by MBE: Recent issues
Characterization of laser annealed polycrystalline silicon films on various substrates
Electrical properties of Pd–Au/(In$_{ x }$–Sn$_{1 – x }$) Oxide/Si(p)/Al heterojunction diodes
Effect of the addition of Y$_{2}$O$_{3}$ on the structure, microstructure and piezoelectric properties of PZT(53/47)
Self-extinguishing epoxy molding compound with no flame-retarding additives for electronic components
Ellipsometry study of InN thin films prepared by magnetron sputtering
Dielectric and ferroelectric properties of Ba$_{3}$M$_{3}$Ti$_{5}$Nb$_{5}$O$_{30}$ (M=Sm or Y) ceramics
Growth and characterization of Zn$_{1 – x }$Mg$_{ x }$S thin films for electroluminescent applications
Stability of chromium diffusion barriers during anodic bonding in silicon resistor devices
Journal of Materials Science: Materials in Electronics : Volume 12, Issue 11, November 2001
Journal of Materials Science: Materials in Electronics : Volume 12, Issue 10, October 2001
Journal of Materials Science: Materials in Electronics : Volume 12, Issue 9, September 2001
Journal of Materials Science: Materials in Electronics : Volume 12, Issue 8, August 2001
Journal of Materials Science: Materials in Electronics : Volume 12, Issue 7, July 2001
Journal of Materials Science: Materials in Electronics : Volume 12, Issue 4-6, June 2001
Journal of Materials Science: Materials in Electronics : Volume 12, Issue 3, March 2001
Journal of Materials Science: Materials in Electronics : Volume 12, Issue 2, February 2001
Journal of Materials Science: Materials in Electronics : Volume 12, Issue 1, January 2001
Journal of Materials Science: Materials in Electronics : Volume 11
Journal of Materials Science: Materials in Electronics : Volume 10
Journal of Materials Science: Materials in Electronics : Volume 9
Journal of Materials Science: Materials in Electronics : Volume 8

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Ellipsometry study of InN thin films prepared by magnetron sputtering

Content Provider Springer Nature Link
Author Li, F. Mo, D. Cao, C. B. Zhang, Y. L. Chan, H. L. W. Choy, C. L.
Copyright Year 2001
Abstract Indium nitride (InN) thin films have been deposited on Si(1 0 0) substrates at temperature of 100–400 °C by reactive radio frequency (RF) magnetron sputtering. We measured the ellipsometric spectra of the InN film samples, and obtained the optical constants for the wavelength range of 410–1100 nm. The absorption edge of the InN films is 1.85–1.90 eV. The thicknesses of various InN films are found to be dependent on the substrate temperature.
Starting Page 725
Ending Page 728
Page Count 4
File Format PDF
ISSN 09574522
Journal Journal of Materials Science: Materials in Electronics
Volume Number 12
Issue Number 12
e-ISSN 1573482X
Language English
Publisher Kluwer Academic Publishers
Publisher Date 2001-01-01
Publisher Place Boston
Access Restriction One Nation One Subscription (ONOS)
Subject Keyword Optical and Electronic Materials Characterization and Evaluation Materials
Content Type Text
Resource Type Article
Subject Atomic and Molecular Physics, and Optics Biomaterials Biophysics Condensed Matter Physics Electronic, Optical and Magnetic Materials Bioengineering Electrical and Electronic Engineering Biomedical Engineering
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